Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Walid Redjem"'
Autor:
Walid Redjem, Ariel J. Amsellem, Frances I. Allen, Gabriele Benndorf, Jianhui Bin, Stepan Bulanov, Eric Esarey, Leonard C. Feldman, Javier Ferrer Fernandez, Javier Garcia Lopez, Laura Geulig, Cameron R. Geddes, Hussein Hijazi, Qing Ji, Vsevolod Ivanov, Boubacar Kanté, Anthony Gonsalves, Jan Meijer, Kei Nakamura, Arun Persaud, Ian Pong, Lieselotte Obst-Huebl, Peter A. Seidl, Jacopo Simoni, Carl Schroeder, Sven Steinke, Liang Z. Tan, Ralf Wunderlich, Brian Wynne, Thomas Schenkel
Publikováno v:
Communications Materials, Vol 4, Iss 1, Pp 1-10 (2023)
Defect engineering and doping of semiconductors by ion irradiation are essential in large-scale integration of electronic devices. Here, intense ion pulses from a laser-accelerator, with flux levels up to 1022 ions cm-2 s-1, are used to induce and op
Externí odkaz:
https://doaj.org/article/c0205fa0b2bb4659a41e7f7677695de3
Autor:
Thomas Schenkel, Walid Redjem, Arun Persaud, Wei Liu, Peter A. Seidl, Ariel J. Amsellem, Boubacar Kanté, Qing Ji
Publikováno v:
Quantum Beam Science, Vol 6, Iss 1, p 13 (2022)
Short-pulse ion beams have been developed in recent years and now enable applications in materials science. A tunable flux of selected ions delivered in pulses of a few nanoseconds can affect the balance of defect formation and dynamic annealing in m
Externí odkaz:
https://doaj.org/article/b729faa2d7864e90bcac4dd92be9f036
Autor:
Zhetao Jia, Matteo Seclì, Alexander Avdoshkin, Walid Redjem, Elizabeth Dresselhaus, Joel Moore, Boubacar Kanté
Publikováno v:
Science advances, vol 9, iss 14
Complex networks play a fundamental role in understanding phenomena from the collective behavior of spins, neural networks, and power grids to the spread of diseases. Topological phenomena in such networks have recently been exploited to preserve the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65ea00209d91c4480215dd14cbcce3ed
http://arxiv.org/abs/2211.12719
http://arxiv.org/abs/2211.12719
Publikováno v:
2022 28th International Semiconductor Laser Conference (ISLC).
Autor:
Vsevolod Ivanov, Jacopo Simoni, Yeonghun Lee, Wei Liu, Kaushalya Jhuria, Walid Redjem, Yertay Zhiyenbayev, Christos Papapanos, Wayesh Qarony, Boubacar Kanté, Arun Persaud, Thomas Schenkel, Liang Z. Tan
Publikováno v:
Physical Review B, vol 106, iss 13
The study of defect centers in silicon has been recently reinvigorated by their potential applications in optical quantum information processing. A number of silicon defect centers emit single photons in the telecommunication $O$-band, making them pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::097a15b5ab196f11c10edec149f6f395
https://escholarship.org/uc/item/3nd8s277
https://escholarship.org/uc/item/3nd8s277
Publikováno v:
Laser Technology for Defense and Security XVII.
Publikováno v:
Optics letters. 47(7)
Light-actuated motors, vehicles, and even space sails have drawn tremendous attention for basic science and applications in space, biomedical, and sensing domains. Optical bound states in the continuum (BIC) are topological singularities of the scatt
Autor:
Rushin Contractor, Wanwoo Noh, Walid Redjem, Wayesh Qarony, Emma Martin, Scott Dhuey, Adam Schwartzberg, Boubacar Kanté
Publikováno v:
Nature. 608(7924)
Single-aperture cavities are a key component of lasers that are instrumental for the amplification and emission of a single light mode. However, the appearance of high-order transverse modes as the size of the cavities increases has frustrated effort
Autor:
Yertay Zhiyenbayev, Walid Redjem, Vsevolod Ivanov, Wayesh Qarony, Christos Papapanos, Jacopo Simoni, Wei Liu, Kaushalya Jhuria, Liang Z. Tan, Thomas Schenkel, Boubacar Kanté
Publikováno v:
Optics Express. 31:8352
Quantum light sources play a fundamental role in quantum technologies ranging from quantum networking to quantum sensing and computation. The development of these technologies requires scalable platforms, and the recent discovery of quantum light sou
Autor:
Walid Redjem, Sébastien Pezzagna, Jan Meijer, I. Robert-Philip, Alrik Durand, Yoann Baron, Jean-Michel Gérard, A. Dréau, Vincent Jacques, Guillaume Cassabois, T. Herzig, A. Benali, A. Yu. Kuznetsov, Marco Abbarchi
Publikováno v:
Physical Review Letters
Physical Review Letters, American Physical Society, 2021, 126 (7), pp.083602. ⟨10.1103/PhysRevLett.126.083602⟩
Physical Review Letters, 2021, 126 (7), pp.083602. ⟨10.1103/PhysRevLett.126.083602⟩
Physical Review Letters, American Physical Society, 2021, 126 (7), pp.083602. ⟨10.1103/PhysRevLett.126.083602⟩
Physical Review Letters, 2021, 126 (7), pp.083602. ⟨10.1103/PhysRevLett.126.083602⟩
We report the detection of individual emitters in silicon belonging to seven different families of optically active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon- on-insulator wafer usually employ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::843385f96c7ad0c0cdf1722f76fd44bb
https://hal.archives-ouvertes.fr/hal-03162094
https://hal.archives-ouvertes.fr/hal-03162094