Výsledky vyhledávání - "Walid El-Huni"

Development and simulated environment testing of β-(Al)Ga2O3-based photodetectors for space-based observation of the Herzberg continuum

Autor: P. Gilbert, F. H. Teherani, X. Arrateig, S. Gautier, A. Ougazzaden, H. Ghorbel, F. Bouyssou, Z. Djebbour, Y. Sama, I. Sidi-Boumeddine, H. Bouhnane, A. Brezart-Oudot, Arouna Darga, V. Sandana, Walid El-Huni, P. Maso, S. Le Gall, David J. Rogers, P. Bove

Publikováno v: Sensors, Systems, and Next-Generation Satellites XXV
Sensors, Systems, and Next-Generation Satellites XXV, Sep 2021, Online Only, SPIE, pp.41, 2021, ⟨10.1117/12.2603565⟩

International audience; With the advent of “New Space” and the explosion of nanosatellite missions, an extended latitude is offered for the emergence of innovative technological devices such as novel compact solid state UVC sensors. In this conte

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dbadaf0854d518907d0fbe795f1f0ef8
https://hal-cnrs.archives-ouvertes.fr/hal-03414495

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Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer

Autor: Karim Bouzid, Jean-Paul Salvestrini, Vishnu Ottapilakkal, Soufiane Karrakchou, Hibat E. Adjmi, Ali Ahaitouf, Paul L. Voss, Adama Mballo, Rajat Gujrati, Abdallah Ougazzaden, Suresh Sundaram, Phuong Vuong, Gilles Patriarche, Walid El Huni

Publikováno v: ACS Applied Electronic Materials
ACS Applied Electronic Materials, American Chemical Society, 2021, 3 (6), pp.2614-2621. ⟨10.1021/acsaelm.1c00206⟩

International audience; We demonstrate the fabrication of vertical InGaN light-emitting diodes (LEDs) on large-area free-standing membranes, using a mechanical lift-off technique enabled by 2D h-BN. 30 μm-thick electroplated copper deposited on the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18d7b4da2c5a4e86e5831cb361457c1e
https://hal.archives-ouvertes.fr/hal-03350389

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Nanopyramid-based absorber to boost the efficiency of InGaN solar cells

Autor: Walid El Huni, Yacine Halfaya, Houda Ennakrachi, Simon Gautier, Soufiane Karrakchou, Taha Ayari, Ali Ahaitouf, Renaud Puybaret, Matthew B. Jordan, Chris Bishop, Paul L. Voss, Abdallah Ougazzaden, Jean-Paul Salvestrini, Muhammad Arif

Publikováno v: Solar Energy
Solar Energy, Elsevier, 2019, 190, pp.93-103. ⟨10.1016/j.solener.2019.07.090⟩

International audience; InGaN nano-structures, grown using nano selective area growth, have been shown to exhibit high crystalline quality, even for high In content InGaN alloy, and reduced polarization charge effect. They are thus very attractive fo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d817dab61805ee38ea286d9d940eb0f9
https://hal.archives-ouvertes.fr/hal-02282639/file/Manuscript_WH.pdf

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High-efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4-terminal tandem cells

Autor: Anne Migan, Jean-Paul Salvestrini, Abdallah Ougazzaden, Zakaria Djebbour, Walid El-Huni

Publikováno v: Progress in Photovoltaics: Research and Applications. 24:1436-1447

In this work, we present a double-junction solar cell with a crystalline silicon solar cell as a bottom junction and an indium gallium nitride-based semibulk-structured solar cell as a top junction. Using SILVACO Atlas and taking into account polariz

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::728f8405ef72c7b8a6dc4c69007b5bcf
https://doi.org/10.1002/pip.2807

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Optimization of semibulk InGaN-based solar cell using realistic modeling

Autor: Jean-Paul Salvestrini, Walid El-Huni, Anne Migan-Dubois, Paul L. Voss, Z. Djebbour, Abdallah Ougazzaden

Publikováno v: Solar Energy
Solar Energy, Elsevier, 2017, 157, pp.687-691. ⟨10.1016/j.solener.2017.08.074⟩
Solar Energy, 2017, 157, pp.687-691. ⟨10.1016/j.solener.2017.08.074⟩

Due to its high absorption coefficient and variable bandgap, InGaN is being intensively studied for photovoltaic applications. Growth of thick homogenous InGaN absorbers is challenging due to relaxation, clustering, and transition from 2D to 3D growt

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4c29405f741026ade96590cebc0597b
https://hal.archives-ouvertes.fr/hal-01630066

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Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts

Autor: Walid El-Huni, Anne Migan, Zakaria Djebbour, David Alamarguy

Publikováno v: EPJ Photovoltaics
EPJ Photovoltaics, 2017, 8, ⟨10.1051/epjpv/2017003⟩
EPJ Photovoltaics, EDP sciences, 2017, 8, ⟨10.1051/epjpv/2017003⟩
EPJ Photovoltaics, Vol 8, p 85502 (2017)

International audience; Due to its electrical and optical interesting properties, InGaN alloy is being intensively studied to be combined with silicon in order to achieve low-cost high-efficiency solar cell. However, a relatively thick monophasic lay

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3c1c0067ed0ff84538b37ebbf5d23bd1
https://hal.science/hal-01570086/document

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