Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Walid Amir"'
Autor:
Ki-Yong Shin, Ju-Won Shin, Walid Amir, Surajit Chakraborty, Jae-Phil Shim, Sang-Tae Lee, Hyunchul Jang, Chan-Soo Shin, Hyuk-Min Kwon, Tae-Woo Kim
Publikováno v:
Materials, Vol 16, Iss 18, p 6138 (2023)
Our investigation focused on assessing the influence of the metamorphic buffer in metamorphic high-electron-mobility transistors (MHEMT) that were grown on GaAs substrates. While an MHEMT exhibited elevated off-state current levels, its direct curren
Externí odkaz:
https://doaj.org/article/8bd82ad4a063435aa07d51a7bd7fcc83
Autor:
Walid Amir, Ju-Won Shin, Ki-Yong Shin, Jae-Moo Kim, Chu-Young Cho, Kyung-Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae-Woo Kim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Abstract The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps we
Externí odkaz:
https://doaj.org/article/fab21a9fee9a4362ab6f717d38ac996d
Publikováno v:
Materials, Vol 16, Iss 12, p 4469 (2023)
In this study, we present a detailed analysis of trapping characteristics at the AlxGa1−xN/GaN interface of AlxGa1−xN/GaN high-electron-mobility transistors (HEMTs) with reliability assessments, demonstrating how the composition of the Al in the
Externí odkaz:
https://doaj.org/article/9fabbfd4ddc74c999bc5e13e6f8817cf
Publikováno v:
IEEE Access, Vol 8, Pp 211464-211473 (2020)
We investigated the effects of quantum confinement in determining the interface traps (Dit) and border traps (Nbt) of ALD deposited Al2O3 with temperature variations onto InxGa1-xAs on a 300-mm Si (001) substrate. We also analysed the impact of these
Externí odkaz:
https://doaj.org/article/ec4bfe4612b34bf7aeb947c8dda86e5a
Autor:
Surajit Chakraborty, Walid Amir, Ju-Won Shin, Ki-Yong Shin, Chu-Young Cho, Jae-Moo Kim, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Hyuk-Min Kwon, Dae-Hyun Kim, Tae-Woo Kim
Publikováno v:
Materials, Vol 15, Iss 23, p 8415 (2022)
We presented an explicit empirical model of the thermal resistance of AlGaN/GaN high-electron-mobility transistors on three distinct substrates, including sapphire, SiC, and Si. This model considered both a linear and non-linear thermal resistance mo
Externí odkaz:
https://doaj.org/article/43222bcab01c427883a81bd20339bfe1
Autor:
Walid Amir, Ju‑Won Shin, Ki‑Yong Shin, Jae‑Moo Kim, Chu‑Young Cho, Kyung‑Ho Park, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Tae‑Woo Kim
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-1 (2021)
Externí odkaz:
https://doaj.org/article/e9fc89a38b0c4ba2b1939ae82fa6fb02
Autor:
Walid Amir, Ju-Won Shin, Ki-Yong Shin, Surajit Chakraborty, Chu-Young Cho, Jae-Moo Kim, Sang-Tae Lee, Takuya Hoshi, Takuya Tsutsumi, Hiroki Sugiyama, Hideaki Matsuzaki, Dae-Hyun Kim, Tae-Woo Kim
Publikováno v:
IEEE Transactions on Electron Devices. 70:2988-2993
Publikováno v:
Materials Science Forum. 1074:125-131
This paper introduced an accurate empirical model for the thermal resistance of a single-finger AlGaN-GaN high electron mobility transistor (HEMT) on three different substrates including Sapphire, SiC and Si. The model reckons the constant thermal co
Publikováno v:
Materials; Volume 16; Issue 12; Pages: 4469
In this study, we present a detailed analysis of trapping characteristics at the AlxGa1−xN/GaN interface of AlxGa1−xN/GaN high-electron-mobility transistors (HEMTs) with reliability assessments, demonstrating how the composition of the Al in the
Autor:
Kyungho Park, Jae-Moo Kim, Walid Amir, Tae-Woo Kim, Ki-Yong Shin, Hiroki Sugiyama, Chu-Young Cho, Takuya Hoshi, Takuya Tsutsumi, Hideaki Matsuzaki, Ju-Won Shin
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-9 (2021)
Scientific Reports
Scientific Reports
The characteristics of traps between the Al0.25Ga0.75N barrier and the GaN channel layer in a high-electron-mobility-transistors (HEMTs) were investigated. The interface traps at the Al0.25Ga0.75N/GaN interface as well as the border traps were experi