Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Walid A. Hadi"'
Publikováno v:
دراسات أقليمية, Vol 9, Iss 28, Pp 225-277 (2012)
This paper is meant to shed light on the Jordanian election laws and their impact on the political reformation process from 1989 up to the present time. By so doing, an attempt has been made to thoroughly review the most salient election laws issued
Externí odkaz:
https://doaj.org/article/6d7030519f364d3394825a7fc49ba8d5
Publikováno v:
MRS Advances. 4:2673-2678
The role that changes in the crystal temperature and the doping concentration play in shaping the character of the steady-state and transient transport response of electrons within bulk wurtzite zinc oxide will be examined. Monte Carlo electron trans
Publikováno v:
Journal of Positive School Psychology; 2022, Vol. 6 Issue 9, p1392-1406, 15p
Publikováno v:
MRS Advances. 3:3439-3444
We present some recently acquired results corresponding to the nature of the electron transport that occurs within bulk alloys of zinc-magnesium-oxide. These results are obtained using three-valley ensemble semi-classical Monte Carlo electron transpo
Publikováno v:
Journal of Materials Science: Materials in Electronics. 26:4475-4512
Wide energy gap semiconductors are broadly recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material properties of the underlying electronic material
Autor:
Lester F. Eastman, Walid A. Hadi, B. E. Foutz, Poppy Siddiqua, Michael Shur, Stephen K. O’Leary
Publikováno v:
Springer Handbook of Electronic and Photonic Materials ISBN: 9783319489315
The III-V nitride semiconductors, gallium nitride, aluminum nitride, and indium nitride, have been recognized as promising materials for novel electronic and optoelectronic device applications for some time now. Since informed device design requires
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdc48b7b3fb2ff0ab1d139ce4c36f516
https://doi.org/10.1007/978-3-319-48933-9_32
https://doi.org/10.1007/978-3-319-48933-9_32
Publikováno v:
Journal of Materials Science: Materials in Electronics. 25:5524-5534
Within the framework of an ensemble semi-classical three-valley Monte Carlo simulation approach, we examine how the character of the electron transport within zinc-blende indium nitride varies in response to changes in the non-parabolicity. All other
Publikováno v:
Journal of Materials Science: Materials in Electronics. 25:4675-4713
The wide energy gap compound semiconductors, gallium nitride and zinc oxide, are widely recognized as promising materials for novel electronic and optoelectronic device applications. As informed device design requires a firm grasp of the material pro
Publikováno v:
Journal of Materials Science: Materials in Electronics. 24:1624-1634
We critically examine the applicability of the semi-analytical approach of Shur (M. Shur, Electron Lett 12, 615 (1976)) in evaluating the transient electron transport response of gallium arsenide, gallium nitride, and zinc oxide. In particular, we co
Publikováno v:
دراسات أقليمية, Vol 9, Iss 28, Pp 225-277 (2012)
This paper is meant to shed light on the Jordanian election laws and their impact on the political reformation process from 1989 up to the present time. By so doing, an attempt has been made to thoroughly review the most salient election laws issued