Zobrazeno 1 - 10
of 118
pro vyhledávání: '"Waldemar Gawron"'
Autor:
Małgorzata Kopytko, Kinga Majkowycz, Krzysztof Murawski, Jan Sobieski, Waldemar Gawron, Piotr Martyniuk
Publikováno v:
Sensors, Vol 24, Iss 11, p 3566 (2024)
Deep defects in the long-wave infrared (LWIR) HgCdTe heterostructure photodiode were measured via deep-level transient spectroscopy (DLTS) and photoluminescence (PL). The n+-P+-π-N+ photodiode structure was grown by following the metal–organic che
Externí odkaz:
https://doaj.org/article/445d962ced254840a715c4a34411c306
Publikováno v:
Materials, Vol 17, Iss 11, p 2551 (2024)
The cooling requirement for long-wave infrared detectors still creates significant limitations to their functionality. The phenomenon of minority-carrier exclusion and extraction in narrow-gap semiconductors has been intensively studied for over thre
Externí odkaz:
https://doaj.org/article/1025a7cbbb904f28b65e9419ff8febeb
Autor:
Jan Sobieski, Małgorzata Kopytko, Kacper Matuszelański, Waldemar Gawron, Józef Piotrowski, Piotr Martyniuk
Publikováno v:
Sensors, Vol 24, Iss 9, p 2837 (2024)
HgCdTe is a well-known material for state-of-the-art infrared photodetectors. The interd-iffused multilayer process (IMP) is used for Metal–Organic Chemical Vapor Deposition (MOCVD) of HgCdTe heterostructures, enabling precise control of compositio
Externí odkaz:
https://doaj.org/article/c206cf405a764e98bb4163e628960075
Publikováno v:
Photonics, Vol 11, Iss 3, p 224 (2024)
This paper presents a response time/time constant of III-V material-based interband long wavelength multistage infrared detector optimized for a wavelength of 10.6 µm at 200 K. The device is based on the InAs/InAsSb type-II superlattice with highly
Externí odkaz:
https://doaj.org/article/3c8383505f8f4103a2099b39c368131c
Autor:
Kacper Matuszelański, Krystian Michalczewski, Łukasz Kubiszyn, Waldemar Gawron, Piotr Martyniuk
Publikováno v:
Engineering Proceedings, Vol 51, Iss 1, p 45 (2023)
Recently, there has been significant interest in type-II superlattice (T2SL) infrared detectors based on both InAs/GaSb and InAs/InAsSb material systems, and fully operating devices have been presented in the mid- (MWIR) and long-wavelength (LWIR) in
Externí odkaz:
https://doaj.org/article/bd359dc17067480c9c73b3cbdfbbdf23
Publikováno v:
Sensors, Vol 22, Iss 3, p 924 (2022)
The trend related to reach the high operating temperature condition (HOT, temperature, T > 190 K) achieved by thermoelectric (TE) coolers has been observed in infrared (IR) technology recently. That is directly related to the attempts to reduce the I
Externí odkaz:
https://doaj.org/article/044f6f94f9c2486f8ec8459cb4dfb107
Publikováno v:
IEEE Electron Device Letters. 43:1487-1490
Publikováno v:
Opto-Electronics Review.
Autor:
Łukasz Kubiszyn, Krystian Michalczewski, Jarosław Jureńczyk, Waldemar Gawron, Józef Piotrowski
Publikováno v:
Infrared Sensors, Devices, and Applications XII.
Autor:
Andrzej Kozniewski, Piotr Martyniuk, Waldemar Gawron, Jaroslaw Rutkowski, Adam Damiecki, Karol A. Stasiewicz, Paweł Madejczyk
Publikováno v:
IEEE Sensors Journal. 21:4509-4516
This paper presents large area multiple photodetectors of the MOCVD grown HgCdTe heterostructures for operation at temperatures of (200-300)K in the long wavelength infrared range. Conventional long wavelength photovoltaic detectors operating at high