Zobrazeno 1 - 10
of 123
pro vyhledávání: '"Wakana Takeuchi"'
Autor:
Mohammed A. Najmi, Rawan S. Jalmood, Ivan Kotov, Cesur Altinkaya, Wakana Takeuchi, Daisuke Iida, Kazuhiro Ohkawa
Publikováno v:
Applied Physics Express, Vol 17, Iss 11, p 111001 (2024)
Here, we report the first demonstration of a full InGaN-based red LED grown on a c -plane ScAlMgO _4 substrate. This work represents a potential approach for achieving red emissions from an InGaN quantum well grown on InGaN underlying layers. The LED
Externí odkaz:
https://doaj.org/article/5c5b9b58f7f0454cbf7caf3c2ebcd438
Autor:
Shigeaki Zaima, Osamu Nakatsuka, Noriyuki Taoka, Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita
Publikováno v:
Science and Technology of Advanced Materials, Vol 16, Iss 4 (2015)
We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for rea
Externí odkaz:
https://doaj.org/article/16a01cc134ec4141be69139f1ecc27ca
Autor:
Wakana Takeuchi, Eiji Kagoshima, Kazushi Sumitani, Yasuhiko Imai, Shigehisa Shibayama, Mitsuo Sakashita, Shigeru Kimura, Hidemoto Tomita, Tsuyoshi Nishiwaki, Hirokazu Fujiwara, Osamu Nakatsuka
Publikováno v:
Japanese Journal of Applied Physics. 61:SC1072
We investigated the local strain in a silicon carbide (4H-SiC) (0001) trench metal-oxide semiconductor field-effect transistor (MOSFET) using synchrotron nanobeam X-ray diffraction (nano-XRD) at the SPring-8 BL13XU beamline. Using X-rays incident on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45dea3910df7e236c6ec687d8023fd31
https://doi.org/10.35848/1347-4065/ac4c6d
https://doi.org/10.35848/1347-4065/ac4c6d
Publikováno v:
Extended Abstracts of the 2020 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb065c05ca3a36d0cf92415189cbfd5b
https://doi.org/10.7567/ssdm.2020.f-1-03
https://doi.org/10.7567/ssdm.2020.f-1-03
Publikováno v:
Thin Solid Films. 645:57-63
We report the epitaxy of n-Ge layer with in situ phosphorus (P)-doping using metal-organic chemical vapor deposition (MOCVD) method with tertiary-butyl-germane and tri-ethyl-phosphine precursors. The crystalline and electrical properties of n-Ge epit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f2bb93127646f49a4e9ad699b91d044
https://doi.org/10.1016/j.tsf.2017.10.013
https://doi.org/10.1016/j.tsf.2017.10.013
Autor:
Osamu Nakatsuka, Isao Yoshikawa, Wakana Takeuchi, Shigeaki Zaima, Masashi Kurosawa, Mitsuo Sakashita
Publikováno v:
Materials Science in Semiconductor Processing. 70:151-155
Solid phase crystallization (SPC) of amorphous GeSn (a-GeSn) layers with a Sn content of 2% on various insulating substrates of Si3N4, sapphire, and Y2O3 have been investigated. We found that Si3N4, which has almost same value of a higher surface ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7900e082ca071cbad583c9619e9ed95
https://doi.org/10.1016/j.mssp.2016.12.038
https://doi.org/10.1016/j.mssp.2016.12.038
Autor:
Masahiro Fukuda, Osamu Nakatsuka, Takashi Yamaha, Yosuke Shimura, Wakana Takeuchi, Takanori Asano, Shigeaki Zaima
Publikováno v:
Materials Science in Semiconductor Processing. 70:133-138
Impact of a local bonding structure in a Si y Ge 1-y-z Sn z thin film on the stabilization of substitutional Sn has been investigated. Ge 1-x Sn x group-IV alloy is widely studied especially for optoelectronic devices as it can become a direct bandga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6883689272c4811e7c7abf5e6d4dc57
https://doi.org/10.1016/j.mssp.2016.11.013
https://doi.org/10.1016/j.mssp.2016.11.013
Publikováno v:
Journal of Crystal Growth. 468:614-619
Selective epitaxial growth of Ge and Ge1−xSnx layers on Si substrates was performed by using metal-organic chemical vapor deposition (MOCVD) with precursors of tertiary-butyl-germane (t-BGe) and tri-butyl-vinyl-tin (TBVSn). We investigated the effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::697aff95f22f4edcac578db2112b8174
https://doi.org/10.1016/j.jcrysgro.2016.10.013
https://doi.org/10.1016/j.jcrysgro.2016.10.013
Autor:
Yasuhiko Imai, Shigeru Kimura, Yuki Inuzuka, Wakana Takeuchi, Tomoya Washizu, Shigeaki Zaima, Osamu Nakatsuka, Shinichi Ike
Publikováno v:
ECS Transactions. 75:769-775
We examined the formation of locally strained Ge nanostructures sandwiched between Ge1−x Sn x stressors using metal-organic chemical vapor deposition method. We have investigated the microscopic local strain and stress in the Ge/Ge1−x Sn x hetero
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b824057e6ee6f44475ccaf3e5f9f99e
https://doi.org/10.1149/07508.0769ecst
https://doi.org/10.1149/07508.0769ecst
Publikováno v:
Thin Solid Films. 602:7-12
The epitaxial growth of a Ge1 − xSnx layer was examined using metal-organic chemical vapor deposition (MOCVD) with two types of Ge precursors; tetra-ethyl-germane (TEGe) and tertiary-butyl-germane (TBGe); and the Sn precursor tri-butyl-vinyl-tin (T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79de85aafa05c1977031fff9e1acaa86
https://doi.org/10.1016/j.tsf.2015.10.043
https://doi.org/10.1016/j.tsf.2015.10.043