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pro vyhledávání: '"Waid, Simon Emanuel"'
Autor:
Gaggl, Philipp, Burin, Jürgen, Gsponer, Andreas, Waid, Simon Emanuel, Thalmeier, Richard, Bergauer, Thomas
Silicon Carbide (SiC) has several advantageous properties compared to Silicon (Si) that make it an appealing detector material, such as a larger charge carrier saturation velocity, bandgap, and thermal conductivity. While the current understanding of
Externí odkaz:
http://arxiv.org/abs/2407.11776
Autor:
Gsponer, Andreas, Gaggl, Philipp, Maier, Jürgen, Thalmeier, Richard, Waid, Simon Emanuel, Bergauer, Thomas
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC devices are e
Externí odkaz:
http://arxiv.org/abs/2310.02047
Autor:
Gaggl, Philipp, Burin, Jürgen, Gsponer, Andreas, Waid, Simon-Emanuel, Thalmeier, Richard, Bergauer, Thomas
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A January 2025 1070 Part 1
