Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Wai-Jyh Chang"'
Autor:
Wai-Jyh Chang, 張偉智
89
Silicon dioxide (SiO2) is widely investigated since the invention of the first Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) in 1960. To date, the oxide thickness is reduced to less than 5 nm with the minimum gate length of 0.2 m
Silicon dioxide (SiO2) is widely investigated since the invention of the first Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) in 1960. To date, the oxide thickness is reduced to less than 5 nm with the minimum gate length of 0.2 m
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/84604510597221271198
Publikováno v:
Solid-State Electronics. 53:279-284
In this study, Anodic Aluminum Oxide (AAO) is used as the storage layer instead of silicon nitride in a silicon–SiO 2 –Si 3 N 4 –SiO 2 –Silcon (SONOS) structure in flash memory devices and a double I – V method is utilized to investigate it
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a7637b3d1d3607837ad8698c3906fca
https://doi.org/10.1016/j.sse.2008.12.005
https://doi.org/10.1016/j.sse.2008.12.005
Publikováno v:
Journal of Applied Physics. 90:5171-5179
The electrical properties of silicon dioxides doped with impurities (fluorine and/or nitrogen) are investigated in this article. Pure silicon dioxide (SiO2), fluorine-doped silicon oxide (SiOF), nitrogen-doped silicon oxide (SiON), and nitrogen-doped
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d7263ceffac3bc62cc12fd0917b7fdc
https://doi.org/10.1063/1.1389079
https://doi.org/10.1063/1.1389079
Publikováno v:
Semiconductor Science and Technology. 16:961-965
The current-voltage (I-V) characteristics of ultrathin silicon dioxides incorporated with fluorine (F) and/or nitrogen (N) are investigated in this paper. A generalized trap-assisted tunnelling model is used to simulate the leakage current at electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb966a24932c2791045a054e9e6b8602
https://doi.org/10.1088/0268-1242/16/12/302
https://doi.org/10.1088/0268-1242/16/12/302
Publikováno v:
Journal of Applied Physics. 89:6285-6293
In this article, a modified generalized trap-assisted tunneling model (GTAT) is proposed to explain the excessive currents occurring at low electric fields during stressing (stress-induced leakage current, SILC). Parameters such as trap energy level,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97b1a7e0ee5abee5cc8e04ef605b4ab4
https://doi.org/10.1063/1.1367399
https://doi.org/10.1063/1.1367399
Publikováno v:
Journal of Applied Physics. 86:1488-1491
A generalized trap-assisted tunneling (GTAT) model is proposed in this work, where an effective tunneling barrier of trapezoidal shape is considered, instead of the triangular barrier utilized in the conventional trap-assisted tunneling (TAT) model.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da67418b27e54c584a93e8f534cbcf73
https://doi.org/10.1063/1.370918
https://doi.org/10.1063/1.370918
Publikováno v:
Materials Chemistry and Physics. 59:36-41
Metal-insulator-silicon solar cells with an insulator layer fabricated by the liquid phase deposition method, denoted as LPD-MIS solar cells, were studied. Under the illumination, an output efficiency up to 7.2% was obtained. A photovoltaic phenomeno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c89659647afe1735c959f265f1864ff
https://doi.org/10.1016/s0254-0584(99)00037-1
https://doi.org/10.1016/s0254-0584(99)00037-1
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 17:102-107
A low temperature (35–45 °C) process of liquid phase deposition (LPD) for the growth of silicon dioxide (SiO2) on Hg1−xCdxTe is proposed. To enhance the formation of SiO2, the HgCdTe surface has to be treated by ammonia solution before LPD. A th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8ee9f0ba68bf9d15b2194570f359aaf
https://doi.org/10.1116/1.581558
https://doi.org/10.1116/1.581558
Publikováno v:
Journal of Applied Physics. 82:5788-5792
This article demonstrates the growth of silicon dioxide (SiO2) on a gallium arsenide (GaAs) substrate by use of the liquid phase deposition (LPD) method at extremely low temperature (∼40 °C). This method cannot only grow SiO2 but it can also obtai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24210bf6dda7b458cf72c066cdf3389d
https://doi.org/10.1063/1.366445
https://doi.org/10.1063/1.366445
Publikováno v:
Japanese Journal of Applied Physics. 40:1300
In this study, the electrical properties of ultrathin (5–9 nm) liquid-phase-deposited fluorinated silicon oxides (LPD-SiOFs) are investigated under various annealing conditions. The electron tunneling current at E ox=4–6 MV/cm is suggested to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76eb335178ecd92ce853c14188a0b66f
https://doi.org/10.1143/jjap.40.1300
https://doi.org/10.1143/jjap.40.1300