Zobrazeno 1 - 10
of 51
pro vyhledávání: '"Wai Son Ko"'
Autor:
Gerhard Abstreiter, Wai Son Ko, Xiaodong Wang, D. Spirkoska, Connie J. Chang-Hasnain, Ilaria Zardo, Sara Yazji, Jonathan J. Finley, Kar Wei Ng
Publikováno v:
ACS Nano, 8(11), 11440-11446. American Chemical Society
We use low-temperature microphotoluminescence and photoluminescence excitation spectroscopy to measure the valence band parameters of single wurtzite InGaAs nanoneedles. The effective indium composition is measured by means of polarization-dependent
Publikováno v:
Nano Letters. 14:4757-4762
III-V compound semiconductors can exist in two major crystal phases, namely, zincblende (ZB) and wurtzite (WZ). While ZB is thermodynamically favorable in conventional III-V epitaxy, the pure WZ phase can be stable in nanowires with diameters smaller
Publikováno v:
Nano Letters. 13:5931-5937
Monolithic integration of III-V optoelectronic devices with materials for various functionalities inexpensively is always desirable. Polysilicon (poly-Si) is an ideal platform because it is dopable and semiconducting, and can be deposited and pattern
Autor:
Wai Son Ko, Stephen Adair Gerke, Indrasen Bhattacharya, Connie J. Chang-Hasnain, Kar Wei Ng, Thai-Truong D. Tran
Publikováno v:
Scientific Reports
Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly p
Autor:
Thai-Truong D. Tran, Roger Chen, L.C. Chuang, Kar Wei Ng, M. Moewe, Connie J. Chang-Hasnain, Forrest G. Sedgwick, Wai Son Ko
Publikováno v:
Nano Letters. 11:385-390
Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based aval
Autor:
L.C. Chuang, Forrest G. Sedgwick, Kar Wei Ng, Connie J. Chang-Hasnain, Thai-Truong D. Tran, Roger Chen, Wai Son Ko
Publikováno v:
Nature Photonics. 5:170-175
Integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, material lattice mismatch and incompatible growth temper
Autor:
Hao Sun, Connie J. Chang-Hasnain, Thai-Truong D. Tran, Kar Wei Ng, Wai Son Ko, Indrasen Bhattacharya
Publikováno v:
Nano letters. 15(8)
Low cost, high efficiency photovoltaic can help accelerate the adoption of solar energy. Using tapered indium phosphide nanopillars grown on a silicon substrate, we demonstrate a single nanopillar photovoltaic exhibiting illumination angle insensitiv
Publikováno v:
CLEO: 2015.
We demonstrate InP nanopillar bipolar junction phototransistors monolithically integrated on a Silicon substrate. With a responsivity of 4 A/W and bandwidth of 7.5 GHz, these receivers indicate a route towards efficient on-chip optical interconnects.
Autor:
Thai-Truong D. Tran, Kar Wei Ng, Connie J. Chang-Hasnain, Fanglu Lu, Roger Chen, Kun Li, Wai Son Ko
Publikováno v:
ACS applied materialsinterfaces. 6(19)
Alloy composition homogeneity plays an important role in the device performance of III-V heterostructures. In this work, we study the spatial composition uniformity of n-In0.12Ga0.88As/i-In0.2Ga0.8As/p-GaAs core-shell nanopillars monolithically grown
Autor:
Fanglu Lu, Wai Son Ko, Thai-Truong D. Tran, Connie J. Chang-Hasnain, Kar Wei Ng, Devang Parekh, Roger Chen, Kun Li
Publikováno v:
Nature Communications. 5
Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and pe