Výsledky vyhledávání - "Wahlbrink T."

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Mobility in Graphene Double Gate Field Effect Transistors

Autor: Lemme, M. C., Echtermeyer, T. J., Baus, M., Szafranek, B. N., Bolten, J., Schmidt, M., Wahlbrink, T., Kurz, H.

Publikováno v: Solid State Electronics, Vol. 52. Issue 4, pp. 514-518, 2008

In this work, double-gated field effect transistors manufactured from monolayer graphene are investigated. Conventional top-down CMOS-compatible processes are applied except for graphene deposition by manual exfoliation. Carrier mobilities in single-

Externí odkaz: http://arxiv.org/abs/0809.5099

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Akademický článek

Overlay accuracy limitations of soft stamp UV nanoimprint lithography and circumvention strategies for device applications

Autor: Cegielski, P.J., Bolten, J., Kim, J.W., Schlachter, F., Nowak, C., Wahlbrink, T., Giesecke, A.L., Lemme, M.C.

Publikováno v: In Microelectronic Engineering 5 October 2018 197:83-86

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Akademický článek

TM grating coupler on low-loss LPCVD based Si[formula omitted]N[formula omitted] waveguide platform

Autor: Dabos, G., Manolis, A., Giesecke, A.L., Porschatis, C., Chmielak, B., Wahlbrink, T., Pleros, N., Tsiokos, D.

Publikováno v: In Optics Communications 15 December 2017 405:35-38

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Observation of magnetic order in La_{1.9}Sr_{0.1}CuO_{4} from two-magnon Raman scattering

Autor: Lin, Y., Sichelschmidt, J., Eldridge, J. E., Wahlbrink, T., Cheong, S. -W.

We reported two-magnon Raman scattering from La_{1.9}Sr_{0.1}CuO_4, which has a suppressed Tc=12 K, as the temperature is lowered below 37 K and an ordered spin phase is formed. The two-magnon Raman intensity increases with decreasing temperature. Th

Externí odkaz: http://arxiv.org/abs/cond-mat/9812027

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