Electronic and transport properties of Li-doped NiO epitaxial thin films (vol 6, pg 2275, 2018)

Autor: Zhang, JY, Li, WW, Hoye, RLZ, MacManus-Driscoll, JL, Budde, M, Bierwagen, O, Wang, L, Du, Y, Wahila, MJ, Piper, LFJ, Lee, T-L, Edwards, HJ, Dhanak, VR, Zhang, KHL

Publikováno v: JOURNAL OF MATERIALS CHEMISTRY C

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::e1ae5b18eff7dfced9e43b89bdb18603

Simultaneous Structural and Electronic Transitions in Epitaxial VO_{2}/TiO_{2}(001).

Autor: Paez GJ; Department of Physics, Binghamton University, State University of New York, Binghamton, New York 13850, USA., Singh CN; Department of Physics, Binghamton University, State University of New York, Binghamton, New York 13850, USA., Wahila MJ; Materials Science and Engineering, Binghamton University, State University of New York, Binghamton, New York 13850, USA., Tirpak KE; Department of Physics, Binghamton University, State University of New York, Binghamton, New York 13850, USA., Quackenbush NF; Department of Physics, Binghamton University, State University of New York, Binghamton, New York 13850, USA., Sallis S; Materials Science and Engineering, Binghamton University, State University of New York, Binghamton, New York 13850, USA., Paik H; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA.; Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), Cornell University, Ithaca, New York 14853, USA., Liang Y; The Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA., Schlom DG; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501, USA.; Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA., Lee TL; Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot OX11 0DE, United Kingdom., Schlueter C; Diamond Light Source Ltd., Harwell Science and Innovation Campus, Didcot OX11 0DE, United Kingdom., Lee WC; Department of Physics, Binghamton University, State University of New York, Binghamton, New York 13850, USA., Piper LFJ; Department of Physics, Binghamton University, State University of New York, Binghamton, New York 13850, USA.; Materials Science and Engineering, Binghamton University, State University of New York, Binghamton, New York 13850, USA.

Publikováno v: Physical review letters [Phys Rev Lett] 2020 May 15; Vol. 124 (19), pp. 196402.

Scalable Memdiodes Exhibiting Rectification and Hysteresis for Neuromorphic Computing.

Autor: Shank JC; Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States of America., Tellekamp MB; Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States of America., Wahila MJ; Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, NY, 13902, United States of America., Howard S; Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, NY, 13902, United States of America., Weidenbach AS; Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States of America., Zivasatienraj B; Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States of America., Piper LFJ; Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, NY, 13902, United States of America., Doolittle WA; Department of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, 30332, United States of America. alan.doolittle@ece.gatech.edu.

Publikováno v: Scientific reports [Sci Rep] 2018 Aug 28; Vol. 8 (1), pp. 12935. Date of Electronic Publication: 2018 Aug 28.

Direct Observation of Electrostatically Driven Band Gap Renormalization in a Degenerate Perovskite Transparent Conducting Oxide.

Autor: Lebens-Higgins Z; Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, 10 New York 13902, USA., Scanlon DO; Kathleen Lonsdale Materials Chemistry, Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, United Kingdom., Paik H; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA., Sallis S; Materials science and Engineering, Applied Physics and Astronomy, Binghamton University, Binghamton, 10 New York 13902, USA., Nie Y; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA.; Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA‡, Uchida M; Laboratory of Atomic and Solid State Physics, Department of Physics, Cornell University, Ithaca, New York 14853, USA‡; Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), University of Tokyo, Tokyo 113-8656, Japan., Quackenbush NF; Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, 10 New York 13902, USA., Wahila MJ; Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, 10 New York 13902, USA., Sterbinsky GE; National Synchrotron Light Source, Brookhaven National Laboratory, Upton, New York 11973, USA§, Arena DA; National Synchrotron Light Source-II, Basic Energy Sciences Directorate, Brookhaven National Laboratory, Upton, New York 11973, USA¶, Woicik JC; Materials Science and Engineering Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA., Schlom DG; Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA.; Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, United States., Piper LF; Department of Physics, Applied Physics and Astronomy, Binghamton University, Binghamton, 10 New York 13902, USA.; Materials science and Engineering, Applied Physics and Astronomy, Binghamton University, Binghamton, 10 New York 13902, USA.

Publikováno v: Physical review letters [Phys Rev Lett] 2016 Jan 15; Vol. 116 (2), pp. 027602. Date of Electronic Publication: 2016 Jan 15.