Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Wahid Khalfaoui"'
Autor:
Wahid Khalfaoui, Frédéric Cayrel, Emmanuel Collard, Maher Nafouti, Daniel Alquier, Georgio El-zammar, Arnaud Yvon
Publikováno v:
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing, Elsevier, 2018, 78, pp.107-110. ⟨10.1016/j.mssp.2017.11.021⟩
Materials Science in Semiconductor Processing, Elsevier, 2018, 78, pp.107-110. ⟨10.1016/j.mssp.2017.11.021⟩
In this work, non-recessed and Au-free low resistance Ohmic contacts are investigated on AlGaN/GaN on silicon. Based on Ti/Al bilayers, Circular TLM are fabricated and contact values are extracted varying different parameters such as single and combi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ab68a59218d5c51f6385b148bbbcc3f4
https://doi.org/10.1016/j.mssp.2017.11.021
https://doi.org/10.1016/j.mssp.2017.11.021
Autor:
Wahid Khalfaoui, Daniel Alquier, Emmanuel Collard, Georgio El-zammar, Arnaud Yvon, Frédéric Cayrel, T. Oheix
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2015, 355, pp.1044-1050. ⟨10.1016/j.apsusc.2015.07.201⟩
Applied Surface Science, Elsevier, 2015, 355, pp.1044-1050. ⟨10.1016/j.apsusc.2015.07.201⟩
International audience; Graphical abstract: Surface state of a crack-free AlN cap-layer reactive sputtered on GaN and annealed at high temperature showing a smooth, pit-free surface. - Highlights: • We deposit a crystalline AlN layer by reactive ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::896324c1a8d653f2cd84bf2905b3ece9
https://hal.archives-ouvertes.fr/hal-01784768
https://hal.archives-ouvertes.fr/hal-01784768
Autor:
Wahid Khalfaoui, Frédéric Cayrel, Eric Faulques, Daniel Alquier, Georgio El-zammar, Thomas Oheix, Roland Benoit, Arnaud Yvon, Emmanuel Collard, Florian Massuyeau
Publikováno v:
physica status solidi (a). 214:1600438
Local p-type doping in GaN is a key issue for device development but it remains a challenge to be achieved. In this work, we studied the activation of Mg implanted in the GaN. Multi-energy implantations were performed to achieve a “box-like” prof
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b14ec40f11e193e776b915deb829518a
https://doi.org/10.1002/pssa.201600438
https://doi.org/10.1002/pssa.201600438
Autor:
Wahid Khalfaoui, Arnaud Yvon, Frédéric Cayrel, Roland Benoit, Emmanuel Collard, Daniel Alquier, T. Oheix
Publikováno v:
Semiconductor Science and Technology. 31:045008
Gallium nitride (GaN) is generally considered a good candidate for power electronic devices such as Schottky barrier diodes (SBDs). Nevertheless, GaN has a strong sensitivity to high temperature treatments and a cap-layer is mandatory to protect the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5a6629ca8205ea62fe91e49279e360e
https://doi.org/10.1088/0268-1242/31/4/045008
https://doi.org/10.1088/0268-1242/31/4/045008
Autor:
Mohamed Boufnichel, Wahid Khalfaoui, Nicolas Gosset, Remi Dussart, Virginie Grimal-Perrigouas, Rami Ljazouli, Emilie Bahette
Publikováno v:
Journal of Micromechanics and Microengineering
Journal of Micromechanics and Microengineering, IOP Publishing, 2015, 25, pp.095011. ⟨10.1088/0960-1317/25/9/095011⟩
Journal of Micromechanics and Microengineering, IOP Publishing, 2015, 25, pp.095011. ⟨10.1088/0960-1317/25/9/095011⟩
International audience; Ion beam etching (IBE) is a very promising technique in microelectronics because of its capability to etch small patterns with a high resolution and inert materials. In this study, the angular incidence of an argon ion beam on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b07f3399c1d7f6f6464c48a5110015b
https://doi.org/10.1088/0960-1317/25/9/095011
https://doi.org/10.1088/0960-1317/25/9/095011
Publikováno v:
Semiconductor Science & Technology; Apr2016, Vol. 31 Issue 4, p1-1, 1p