Zobrazeno 1 - 10
of 175
pro vyhledávání: '"Wagner, Markus R."'
Autor:
Limame, Imad, Shih, Ching-Wen, Koltchanov, Alexej, Heisinger, Fabian, Nippert, Felix, Plattner, Moritz, Schall, Johannes, Wagner, Markus R., Rodt, Sven, Klenovsky, Petr, Reitzenstein, Stephan
We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This advanced growth technique utilizes the strain from
Externí odkaz:
http://arxiv.org/abs/2311.05777
Autor:
Chen, Wenshan, Egbo, Kingsley, Tornatzky, Hans, Ramsteiner, Manfred, Wagner, Markus R., Bierwagen, Oliver
Publikováno v:
APL Mater. 11, 071110 (2023)
Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To explore these crystalline phases for application and fundamental material
Externí odkaz:
http://arxiv.org/abs/2304.11097
Autor:
Ratcliff, Laura E., Oshima, Takayoshi, Nippert, Felix, Janzen, Benjamin M., Kluth, Elias, Goldhahn, Rüdiger, Feneberg, Martin, Mazzolini, Piero, Bierwagen, Oliver, Wouters, Charlotte, Nofal, Musbah, Albrecht, Martin, Swallow, Jack E. N., Jones, Leanne A. H., Thakur, Pardeep K., Lee, Tien-Lin, Kalha, Curran, Schlueter, Christoph, Veal, Tim D., Varley, Joel B., Wagner, Markus R., Regoutz, Anna
Ga$_2$O$_3$ and its polymorphs are attracting increasing attention. The rich structural space of polymorphic oxide systems such as Ga$_2$O$_3$ offers potential for electronic structure engineering, which is of particular interest for a range of appli
Externí odkaz:
http://arxiv.org/abs/2205.04412
We employ a combined experimental-theoretical study of the first- and second-order Raman modes of monoclinic $\beta$-Ga$_{2}$O$_{3}$. The investigated materials is of particular interest due to its deep-UV bandgap paired with a high critical field st
Externí odkaz:
http://arxiv.org/abs/2201.05154
Autor:
Janzen, Benjamin M., Mazzolini, Piero, Gillen, Roland, Falkenstein, Andreas, Martin, Manfred, Tornatzky, Hans, Bierwagen, Oliver, Wagner, Markus R.
Holding promising applications in power electronics, the wide band gap material gallium oxide has emerged as a vital alternative to materials like GaN and SiC. The detailed study of phonon modes in $\beta$-Ga$_{2}$O$_{3}$ provides insights into funda
Externí odkaz:
http://arxiv.org/abs/2008.07523
Autor:
Swallow, Jack E. N., Vorwerk, Christian, Mazzolini, Piero, Vogt, Patrick, Bierwagen, Oliver, Karg, Alexander, Eickhoff, Martin, Schörmann, Jörg, Wagner, Markus R., Roberts, Joseph W., Chalker, Paul R., Smiles, Matthew J., Murgatroyd, Philip A. E., Razek, Sara A., Lebens-Higgins, Zachary W., Piper, Louis F. J., Jones, Leanne A. H., Thakur, Pardeep Kumar, Lee, Tien-Lin, Varley, Joel B., Furthmüller, Jürgen, Draxl, Claudia, Veal, Tim D., Regoutz, Anna
Publikováno v:
Chemistry of Materials 32, 8460 2020
The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy efficient power electronic devices. Ga$_2$O$_3$ has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental p
Externí odkaz:
http://arxiv.org/abs/2005.13395
Autor:
Poliani, Emanuele, Seidlitz, Daniel, Ries, Maximilian, Choi, Soo J., Speck, Jim S., Hoffmann, Axel, Wagner, Markus R.
We report a detailed study of the strong near-field Raman scattering enhancement which takes place in tip-enhanced Raman scattering (TERS) in indium nitride. In addition to the well-known first-order optical phonons of indium nitride, near-field Rama
Externí odkaz:
http://arxiv.org/abs/1909.04020
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