Zobrazeno 1 - 10
of 125
pro vyhledávání: '"Wafer curvature"'
Autor:
Jonathan Colin, Andreas Jamnig, Clarisse Furgeaud, Anny Michel, Nikolaos Pliatsikas, Kostas Sarakinos, Gregory Abadias
Publikováno v:
Nanomaterials, Vol 10, Iss 11, p 2225 (2020)
Continued downscaling of functional layers for key enabling devices has prompted the development of characterization tools to probe and dynamically control thin film formation stages and ensure the desired film morphology and functionalities in terms
Externí odkaz:
https://doaj.org/article/a88fe4dedbcf48a9b058accf3c0c8f13
Autor:
Rajkiran Tholapi, Manon Gallard, Nelly Burle, Christophe Guichet, Stephanie Escoubas, Magali Putero, Cristian Mocuta, Marie-Ingrid Richard, Rebecca Chahine, Chiara Sabbione, Mathieu Bernard, Leila Fellouh, Pierre Noé, Olivier Thomas
Publikováno v:
Nanomaterials, Vol 10, Iss 6, p 1247 (2020)
Phase change materials are attractive materials for non-volatile memories because of their ability to switch reversibly between an amorphous and a crystal phase. The volume change upon crystallization induces mechanical stress that needs to be unders
Externí odkaz:
https://doaj.org/article/084acc192165421a9c9bd9245e7c3f9c
Publikováno v:
Nanomaterials, Vol 8, Iss 11, p 896 (2018)
The present study investigated the influence of nanoscale residual stress depth gradients on the nano-mechanical behavior and adhesion energy of aluminium nitride (AlN) and Al/AlN sputtered thin films on a (100) silicon substrate. By using a focused
Externí odkaz:
https://doaj.org/article/b23bf69e46d84ad88e2bba8dea16fe5e
Publikováno v:
Gallium Nitride Materials and Devices XVI.
We will show our two recent results related to GaN-based VCSELs with AlInN/GaN DBRs. One is in-situ wafer curvature control of AlInN/GaN DBRs. Curvature data successfully provides us the strain condition in the AlInN layers, which leads to a high rep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfcf2177b27f13913df1678237b6aaaa
https://doi.org/10.1117/12.2576494
https://doi.org/10.1117/12.2576494
Publikováno v:
JOURNAL OF APPLIED PHYSICS
An analytical model for the evolution of residual stress in polycrystalline thin films is used to analyze numerous previously reported wafer curvature measurements obtained for a variety of materials and processing conditions. The model, which has be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29b7744b7998c765cfffd4e59a7dedb6
https://biblio.ugent.be/publication/8723082
https://biblio.ugent.be/publication/8723082
Akademický článek
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Autor:
Andreas Jamnig, Gregory Abadias, A. Michel, Clarisse Furgeaud, Kostas Sarakinos, N. Pliatsikas, J. Colin
Publikováno v:
Nanomaterials, Vol 10, Iss 2225, p 2225 (2020)
Nanomaterials
Nanomaterials, MDPI, 2020, 10, ⟨10.3390/nano10112225⟩
Nanomaterials
Nanomaterials, MDPI, 2020, 10, ⟨10.3390/nano10112225⟩
Continued downscaling of functional layers for key enabling devices has prompted the development of characterization tools to probe and dynamically control thin film formation stages and ensure the desired film morphology and functionalities in terms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b149a70e433fad961a7e632d06e35e63
https://www.mdpi.com/2079-4991/10/11/2225
https://www.mdpi.com/2079-4991/10/11/2225
Publikováno v:
Journal of Applied Mechanics. 87
We report closed-form formulas to calculate the incremental-deposition stress, the elastic relaxation stress, and the residual stress in a finite-thickness film from a wafer-curvature measurement. The calculation shows how the incremental deposition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71a8ca4f14a5fb3a8c7bf0a7bacdbe63
https://doi.org/10.1115/1.4047572
https://doi.org/10.1115/1.4047572
Autor:
James S. Speck, Youli Li, Erin C. Young, Humberto M. Foronda, Matthew A. Laurent, Steven P. DenBaars, Baishakhi Mazumder
Publikováno v:
Journal of Crystal Growth. 475:127-135
Coherent In x Al 1−x N (x = 0.15 to x = 0.28) films were grown by metalorganic chemical vapor deposition on GaN templates to investigate if the films obey Vegard’s Law by comparing the film stress-thickness product from wafer curvature before and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d6646813312b1c7b71487da4f6582f3
https://doi.org/10.1016/j.jcrysgro.2017.06.008
https://doi.org/10.1016/j.jcrysgro.2017.06.008
Autor:
Eric Chason
Publikováno v:
Handbook of Mechanics of Materials ISBN: 9789811068553
Handbook of Mechanics of Materials
Handbook of Mechanics of Materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::01a9963eb0bad2076f3a2b14055ae577
https://doi.org/10.1007/978-981-10-6884-3_49
https://doi.org/10.1007/978-981-10-6884-3_49