Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Wafa Arfaoui"'
Autor:
Talha Chohan, Zhixing Zhao, Steffen Lehmann, Wafa Arfaoui, Germain Bossu, Jens Trommer, Stefan Slesazeck, Thomas Mikolajick, Mahesh Siddabathula
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 22:387-395
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8b08387c202e55df06e7fb7af849de0
https://doi.org/10.1109/tdmr.2022.3183630
https://doi.org/10.1109/tdmr.2022.3183630
Autor:
Dang Khoa Huynh, Quang Huy Le, Steffen Lehmann, Zhixing Zhao, Germain Bossu, Wafa Arfaoui, Defu Wang, Thomas Kampfe, Matthias Rudolph
Publikováno v:
2021 16th European Microwave Integrated Circuits Conference (EuMIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a9c9649a08ed51601e42ca70271c4b8
https://doi.org/10.23919/eumic50153.2022.9783930
https://doi.org/10.23919/eumic50153.2022.9783930
Autor:
Tom Herrmann, Alban Zaka, Zhixing Zhao, Binit Syamal, Wafa Arfaoui, Ruchil Jain, Ming-Cheng Chang, Sameer Jain, Shih Ni Ong
Publikováno v:
Solid-State Electronics. 199:108512
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9080e67d663ab8098c988e921925f848
https://doi.org/10.1016/j.sse.2022.108512
https://doi.org/10.1016/j.sse.2022.108512
Autor:
Jung-Suk Goo, N. Pimparkar, Wafa Arfaoui, Robert Tu, Germain Bossu, Steffen Lehmann, A.B. Icel, Pratik B. Vyas, M. Siddabathula
Publikováno v:
IRPS
Accurate prediction of device aging plays a vital role in the circuit design of advanced-node CMOS technologies. In particular, hot-carrier induced aging is so complicated that its modeling is often significantly simplified, with focus limited to dig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0665d7351a98a74e4d1f77c9a9abe577
https://doi.org/10.1109/irps46558.2021.9405197
https://doi.org/10.1109/irps46558.2021.9405197
Autor:
R. Manuwald, Germain Bossu, A. Muhlhoff, Tianbing Chen, T. Nigam, D. Lipp, Wafa Arfaoui, M. Siddabathula
Publikováno v:
IRPS
Although technology scaling to deep submicron enable higher degrees of semiconductor integration, highly integrated circuit have become increasingly sensitive to the slightest parameter drift. One of the main causes of parameter degradation in recent
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5df46dc3205a9615c853755c3bc02c74
https://doi.org/10.1109/irps45951.2020.9129479
https://doi.org/10.1109/irps45951.2020.9129479
Autor:
Abdellatif Bellaouar, S.N. Ong, S. Embabi, Tianbing Chen, Kok Wai Johnny Chew, Chi Zhang, Germain Bossu, K. Barnett, J. Bordelon, Wafa Arfaoui, M. Siddabathula, S. Janardhanan, R. Taylor, M. Mantravadi
Publikováno v:
2019 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
This work shows the excellent HCI (hot-carrier injection) reliability that 22FDX demonstrates for mmWave PA applications. The underlying device physics to explain this performance are also shown. Due to the fact that fully depleted SOI (FDSOI) elimin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::caf4ceedf9beb0d2b416f66ce9b1082b
https://doi.org/10.1109/rfic.2019.8701760
https://doi.org/10.1109/rfic.2019.8701760
Autor:
Thomas Mikolajick, Talha Chohan, Furqan Mehmood, Gernot Krause, Viktor Havel, Armin Muhlhoff, Jens Trommer, Wafa Arfaoui, Stefan Slesazeck, Germain Bossu
The degradation predicted by classical DC reliability methods, such as bias temperature instability (BTI) and hot carrier injection (HCI), might not translate sufficiently to the AC conditions, which are relevant on the circuit level. The direct anal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74ad45b5ce79204a9c710771f143f6c1
https://tud.qucosa.de/id/qucosa:76936
https://tud.qucosa.de/id/qucosa:76936
Autor:
P. Mora, David Roy, Damien Angot, Vincent Huard, Frederic Monsieur, Wafa Arfaoui, Mustapha Rafik, Xavier Federspiel, Florian Cacho
Publikováno v:
ECS Meeting Abstracts. :1452-1452
The growing demand on low power applications as well as the continuous scaling down of CMOS devices is facing strong physical limitation, among which the control of short channel effect. In the past decade, silicon industry made several drastic chang
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85fd3393c756f8be0897c10203b8abd0
https://doi.org/10.1149/ma2014-01/39/1452
https://doi.org/10.1149/ma2014-01/39/1452