Parametric nano-electrical analysis for SiC junctions of a packaged device

Autor: Rosine Coq Germanicus, Wadia Jouha, Niemat Moultif, Peter De Wolf, Vishal A. Shah, Peter. M Gammon, Ulrike Luders, Olivier Latry

Publikováno v: IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022
IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe, WiPDA Europe 2022, 2022, pp.1-6. ⟨10.1109/WiPDAEurope55971.2022.9936397⟩
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe)
2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe), Sep 2022, Coventry, France. pp.1-6, ⟨10.1109/WiPDAEurope55971.2022.9936397⟩

Precise and accurate electrical characterization of power electronics device die structures at the wafer level is essential to compare device operation to the design and to model reliability issues. In this paper, a parametric analysis for local elec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87937847d1cab9a8b2fbd9151db53342
https://doi.org/10.1109/wipdaeurope55971.2022.9936397

Failure Analysis of Atmospheric Neutron-Induced Single Event Burnout of a Commercial SiC MOSFET

Autor: Rosine Coq Germanicus, Kimmo Niskanen, Alain Michez, Niemat Moultif, Wadia Jouha, Olivier Latry, Jerôme Boch, Ulrike Lüders, Antoine D. Touboul

Publikováno v: Materials Science Forum
Materials Science Forum, 2022, 1062, pp.544-548. ⟨10.4028/p-973n9u⟩

International audience; Dealing with electronic devices for high reliability applications in terrestrial environments, neutron-induced Single Event Effects must be investigated. In this paper, the experimental observation of an atmospheric-like neutr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d851d3474f2fe0700f09f45450f4159
https://hal.science/hal-03702520

VDS and VGS Depolarization Effect on SiC MOSFET Short-Circuit Withstand Capability Considering Partial Safe Failure-Mode

Autor: Jean-Michel Reynes, Wadia Jouha, Yazan Barazi, Frédéric Richardeau

Publikováno v: Energies, Vol 14, Iss 7960, p 7960 (2021)
Energies; Volume 14; Issue 23; Pages: 7960
Energies
Energies, MDPI, 2021, Invited Paper-Special Issue Safety Design and Management of Power Devices including Gate-Drivers, ⟨10.3390/en14237960⟩

International audience; This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution.This paper presents a detailed analysis of 1200 V Silicon Carbide (SiC) power MOSFETexhibiting different sho

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::096a8c098b340527fb523ceb872c63cc
https://www.mdpi.com/1996-1073/14/23/7960

Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)

Autor: Florent Lallemand, Niemat Moultif, Hugues Murray, Catherine Bunel, Daniel Chateigner, Rosine Coq Germanicus, Wadia Jouha, Arnaud Fouchet, Olivier Latry, Ulrike Lüders

Publikováno v: Nano Express
Nano Express, 2021, 2 (1), pp.010037. ⟨10.1088/2632-959x/abed3e⟩

Progressing miniaturization and the development of semiconductor integrated devices ask for advanced characterizations of the different device components with ever-increasing accuracy. Particularly in highly doped layers, a fine control of local cond

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3f2404c51cf9f15ba564e2d8404cc01
https://hal.science/hal-03341563/file/2021_Nano_Express_2_Coq_Germanicus_010037.pdf

Physical Study of SiC Power MOSFETs Towards HTRB Stress Based on C-V Characteristics

Autor: Mohamed Masmoudi, Wadia Jouha, Pascal Dherbécourt, Ahmed El Oualkadi, Eric Joubert

Publikováno v: IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, In press, pp.1-1. ⟨10.1109/TDMR.2020.2999029⟩
IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2020, 20 (3), pp.506-511. ⟨10.1109/TDMR.2020.2999029⟩

The quality of the gate-oxide and Oxide/SiC interfaces is one of the crucial issues in the implementation of silicon carbide (SiC) Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) in the industrial power electronic applications. The main

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5dbe3b5addf973656313632a36d0aedb
https://normandie-univ.hal.science/hal-03174373