Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Wade J. Hodge"'
Autor:
J. Dunn, Qizhi Liu, Ramana M. Malladi, Peter B. Gray, Ping-Chuan Wang, Kenneth J. Stein, Douglas B. Hershberger, R. Previti-Kelly, Panglijen Candra, Ephrem G. Gebreselasie, Benjamin T. Voegeli, K. Watson, Wade J. Hodge, Peter J. Lindgren, Zhong-Xiang He, Alvin J. Joseph
Publikováno v:
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (fT - BVceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on
Autor:
M. Gordon, J. Rascoe, Qizhi Liu, Bradley A. Orner, J. Greco, Michael L. Gautsch, David C. Ahlgren, J. Dunn, Louis D. Lanzerotti, Wade J. Hodge, Mattias E. Dahlstrom, Jeffrey B. Johnson, Alvin J. Joseph
Publikováno v:
IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..
With the advancement of the fT/fMAX performance scaling of SiGe HBTs the breakdown voltage (BVCBO/BVCEO) reduces commensurately, causing design related concerns. It is important, therefore, that multiple fT/BVCEO devices be offered in the RF technolo
Autor:
Michael L. Gautsch, J. Greco, S. Sweeney, K. Downes, James A. Slinkman, Kunal Vaed, David C. Sheridan, S. St Onge, Peter B. Gray, J. Dunn, R. Bolam, M. Gordon, Wade J. Hodge, B. Omer, J. He, T. Stamper, B. Labelle, J. Higgins, K. Stein, R.M. Murty, Natalie B. Feilchenfeld, Peter J. Lindgren, J. Rascoe, T. Larsen, Alvin J. Joseph, Ebenezer E. Eshun, K. Watson, Douglas D. Coolbaugh, Robert M. Rassel, Louis D. Lanzerotti
Publikováno v:
Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.
We present IBM's next-generation, cost-performance-optimized BiCMOS technology (BiCMOS 8WL) which combines a state-of-the-art suite of SiGe NPNs, foundry compatible 0.13 μm CMOS, and a rich set of modular passive devices. Intended for a wide variety
Autor:
J. Rascoe, Ebenezer E. Eshun, Benjamin T. Voegeli, S. St Onge, Douglas D. Coolbaugh, P. Demag, Peter J. Geiss, Michael J. Zierak, Natalie B. Feilchenfeld, A. Norris, Bradley A. Orner, David C. Sheridan, J. Dunn, T. Larsen, J. Trappasso, J. He, J. Greco, R. Hussain, V. Patel, Michael L. Gautsch, V. Ramachandrian, Peter B. Gray, Wade J. Hodge, Douglas B. Hershberger, Ryan Wayne Wuthrich, Robert M. Rassel, Louis D. Lanzerotti, D. Jordan, Steven H. Voldman
Publikováno v:
Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.
High frequency performance at low current density and low wafer cost is essential for low power wireless BiCMOS technologies. We have developed a low-complexity, ASIC-compatible, 0.18 /spl mu/m SiGe BiCMOS technology for wireless applications that of
Publikováno v:
Journal of The Electrochemical Society. 149:G532
Physical and device characteristics of sub-30 A oxynitride gate dielectrics with different nitrogen concentrations are compared. These dielectrics are formed in a standard atmospheric furnace that is in series with a gas precombustion chamber. All ga