Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Wacquez, Romain"'
Autor:
Kotekar-Patil, Dharmraj, Jauerneck, Stefan, Wharam, David, Kern, Dieter, Jehl, Xavier, Wacquez, Romain, Sanquer, M.
Low temperature electron transport measurements of single electron transistors fabricated in advanced CMOS technology with polysilicon gates not only exhibit clear Coulomb blockade behavior but also show a large number of additional conductance fluct
Externí odkaz:
http://arxiv.org/abs/1401.1237
Autor:
Roche, Benoit, Dupont-Ferrier, Eva, Voisin, Benoit, Cobian, Manuel, Jehl, Xavier, Wacquez, Romain, Vinet, Maud, Niquet, Yann-Michel, Sanquer, Marc
Publikováno v:
Phys. Rev. Lett. 108, 206812 (2012)
We measure a large valley-orbit splitting for shallow isolated phosphorus donors in a silicon gated nanowire. This splitting is close to the bulk value and well above previous reports in silicon nanostructures. It was determined using a double dopant
Externí odkaz:
http://arxiv.org/abs/1207.2901
Autor:
Prati, Enrico, De Michielis, Marco, Belli, Matteo, Cocco, Simone, Fanciulli, Marco, Kotekar-Patil, Dharmraj, Ruoff, Matthias, Kern, Dieter P., Wharam, David A., Verduijn, Arjan, Tettamanzi, Giuseppe, Rogge, Sven, Roche, Benoit, Wacquez, Romain, Jehl, Xavier, Vinet, Maud, Sanquer, Marc
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator (FDSOI) t
Externí odkaz:
http://arxiv.org/abs/1203.4811
Autor:
Roche, Benoît, Voisin, Benoit, Jehl, Xavier, Wacquez, Romain, Sanquer, Marc, Vinet, Maud, Deshpande, Veeresh, Previtali, Bernard
Publikováno v:
Appl. Phys. Lett. 100, 032107 (2012)
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is
Externí odkaz:
http://arxiv.org/abs/1201.3760
Publikováno v:
Journal of Applied Physics 109, 084346 (2011)
We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate MOSFETs (metal-oxide-semiconductor field-effect transistors). The carrier concentration p
Externí odkaz:
http://arxiv.org/abs/1006.0112
Autor:
Pierre, Mathieu, Wacquez, Romain, Roche, Benoit, Jehl, Xavier, Sanquer, Marc, Vinet, Maud, Prati, Enrico, Belli, Matteo, Fanciulli, Marco
Publikováno v:
Applied Physics Letters 95, 242107 (2009)
We report electronic transport on silicon double and triple dots created with the optimized number of two gates. Using silicon nitride spacers two dots in series are created below two top gates overlapping a silicon nanowire. Coupling between dots is
Externí odkaz:
http://arxiv.org/abs/1005.5686
Autor:
Morin, Pierre, Maitrejean, Sylvain, Allibert, Frederic, Augendre, Emmanuel, Liu, Qing, Loubet, Nicolas, Grenouillet, Laurent, Pofelski, Alexandre, Chen, Kangguo, Khakifirooz, Ali, Wacquez, Romain, Reboh, Shay, Bonnevialle, Aurore, le Royer, Cyrille, Morand, Yves, Kanyandekwe, Joel, Chanemougamme, Daniel, Mignot, Yann, Escarabajal, Yann, Lherron, Benoit, Chafik, Fadoua, Pilorget, Sonia, Caubet, Pierre, Vinet, Maud, Clement, Laurent, Desalvo, Barbara, Doris, Bruce, Kleemeier, Walter
Publikováno v:
In Solid State Electronics March 2016 117:100-116
Autor:
L'herron, Benoit, Loubet, Nicolas, Liu, Qing, Farhat, Saiqa, Fullam, Jennifer, Gaudiello, John, Rangarajan, Srinivasan, Bing Sun, Wei Ti Lee, Klare, Mark, Pois, Heath, Kwan, Mike, Ying Wang, Larson, Tom, Wacquez, Romain, Maitrejean, Sylvian
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014); 2014, p26-30, 5p
Akademický článek
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Autor:
Roche, Benoit, Voisin, Benoit, Jehl, Xavier, Sanquer, Marc, Wacquez, Romain, Vinet, Maud, Deshpande, Veeresh, Previtali, Bernard
Publikováno v:
2012 13th International Conference on Ultimate Integration on Silicon (ULIS); 1/ 1/2012, p129-132, 4p