COCAINE-INDUCED HYPERTENSION: ROLE OF THE PERIPHERAL SYMPATHETIC SYSTEM

Autor: Ashok K. Singh, George Dunea, Jose A.L. Arruda, Wa Mo

Publikováno v: Pharmacological Research. 40:139-145

Cocaine causes hypertension at least in part by stimulating the sympathetic nervous system, but it is not clear if this effect is centrally or peripherally mediated. To address this issue we studied the vasoconstrictive effect of cocaine in vivo and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a1d89b4424ebe9f7342a2618829e3f72
https://doi.org/10.1006/phrs.1999.0503

Role of Nitric Oxide in Cocaine-Induced Acute Hypertension

Autor: George Dunea, Wa Mo, Jose A.L. Arruda, Ashok K. Singh

Publikováno v: American Journal of Hypertension. 11:708-714

Cocaine causes acute hypertension by blocking catecholamine reuptake. There is evidence that it also impairs the peripheral endothelial nitric oxide system, which is normally vasodilatory. We further explored the role of nitric oxide in cocaine-induc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::003f0f1b18c324ac5f7fc82723d2056c
https://doi.org/10.1016/s0895-7061(98)00041-7

Effect of glycated proteins on the matrix of glomerular epithelial cells

Autor: George Dunea, Jose A.L. Arruda, Wa Mo, Ashok Kumar Singh

Publikováno v: Journal of the American Society of Nephrology : JASN. 9(5)

In this study, cultured glomerular epithelial cells (GEC) were exposed to a diabetic milieu containing glycated proteins to determine whether such proteins cause metabolic alterations that may lead to defects seen in the extracellular matrix in diabe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e181ce02537089708d7c2d9787b6cb80
https://pubmed.ncbi.nlm.nih.gov/9596077

Filament Engineering of Two-Dimensional h-BN for a Self-Power Mechano-Nociceptor System.

Autor: Ding G; Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China., Chen RS; College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.; Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China., Xie P; Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China., Yang B; College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.; Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China., Shang G; Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China., Liu Y; Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China., Gao L; Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China., Mo WA; College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.; Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China., Zhou K; Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China., Han ST; Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China., Zhou Y; Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China.

Publikováno v: Small (Weinheim an der Bergstrasse, Germany) [Small] 2022 Apr; Vol. 18 (16), pp. e2200185. Date of Electronic Publication: 2022 Feb 26.