Zobrazeno 1 - 6
of 6
pro vyhledávání: '"WU Hua-Sheng"'
Publikováno v:
Communications in Theoretical Physics. 41:609-613
Ab initio total energy calculations are used to determine the interface structure of GaN films grown on 6H-SiC(0001) with different substrate reconstructions. The results indicate that GaN films grown on bare SiC(0001) are of the Ga-polarity, while G
Publikováno v:
Chinese Physics Letters. 21:527-529
The diffusion of N adatoms on a Ga-rich GaN(0001) surface has been studied using density-functional theory. The configuration of Ga adatoms on a Ga-rich GaN surface has been identified. The first adlayer Ga adatoms are on top of the terminating subst
Publikováno v:
Chinese Physics Letters; Mar2004, Vol. 21 Issue 3, p527-529, 3p
Publikováno v:
Extended Abstracts of the 1986 International Conference on Solid State Devices and Materials.
Publikováno v:
Acta Physica Sinica. 38:111
A method for determining the orientation of thin crystal layer has been proposed, namely the Raman scattering extrems technique. The intensity of Raman scattered light from the diamond structure thin layer as a function of both the normal of the thin
Autor:
Zhang YF; Department of Pediatrics, Central Hospital of Enshi Tujia and Miao Autonomous Prefecture, Enshi, Hubei 445000, China. yangzhuren88@163.com., Yu XQ, Liao JH, Yang F, Tan CR, Wu SY, Deng SQ, Feng JY, Huang JY, Yuan ZF, Liu KD, Huang ZJ, Zhang LF, Chen ZG, Xia H, Luo LL, Hu Y, Wu HS, Xie HL, Fei BM, Pang QW, Zhang SH, Cheng BX, Jiang L, Shen CT, Yi Q, Zhou XG
Publikováno v:
Zhongguo dang dai er ke za zhi = Chinese journal of contemporary pediatrics [Zhongguo Dang Dai Er Ke Za Zhi] 2020 Sep; Vol. 22 (9), pp. 942-947.