Zobrazeno 1 - 10
of 249
pro vyhledávání: '"WORTMAN, J.J."'
Publikováno v:
In Microelectronic Engineering 1999 48(1):295-298
Publikováno v:
In Microelectronic Engineering 1999 48(1):211-214
The effects of Ge content in poly-Si 1− xGe x gate material on the tunneling barrier in PMOS devices
Autor:
Shanware, A, Massoud, H.Z, Acker, A, Li, V.Z.-Q, Mirabedini, M.R, Henson, K, Hauser, J.R, Wortman, J.J
Publikováno v:
In Microelectronic Engineering 1999 48(1):39-42
Autor:
Masson, P a, b, *, Morfouli, P a, Autran, J.L b, Brini, J a, Balland, B b, Vogel, E.M c, Wortman, J.J c
Publikováno v:
In Journal of Non-Crystalline Solids 1999 245(1):54-58
Autor:
Li, V.Z-Q, Mirabedini, M.R., Hornung, B.E., Heinisch, H.H., Xu, M., Batchelor, D., Maher, D.M., Wortman, J.J., Kuehn, R.T.
Publikováno v:
Journal of Applied Physics; 5/15/1998, Vol. 83 Issue 10, p5469, 8p, 14 Black and White Photographs, 3 Diagrams, 5 Graphs
Autor:
Shanware, A., Shiely, J.P., Massoud, H.Z., Vogel, E., Henson, K., Srivastava, A., Osburn, C., Hauser, J.R., Wortman, J.J.
Publikováno v:
International Electron Devices Meeting 1999 Technical Digest (Cat No99CH36318); 1999, p815-818, 4p
Publikováno v:
International Electron Devices Meeting 1999 Technical Digest (Cat No99CH36318); 1999, p453-456, 4p
Publikováno v:
1983 International Electron Devices Meeting; 1983, p658-661, 4p
Autor:
Beck, S.E., George, M.A., Bohling, D.A., Shemanski, B.J., McGuire, J.T., Hames, G.A., Wortman, J.J., Lanford, W.A.
Publikováno v:
Proceedings of 1994 IEEE/SEMI Advanced Semiconductor Manufacturing Conference & Workshop (ASMC); 1994, p100-106, 7p
Autor:
Morfouli, P., Ghibaudo, G., Ouisse, T., Vogel, E.M., Hill, W.L., Misra, V., McLarty, P., Wortman, J.J.
Publikováno v:
ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference; 1995, p247-250, 4p