Zobrazeno 1 - 10
of 3 181
pro vyhledávání: '"WIDE BAND GAP SEMICONDUCTORS"'
An RC snubber design method to achieve optimized switching noise‐loss trade‐off of cascode GaN HEMTs
Publikováno v:
IET Power Electronics, Vol 17, Iss 12, Pp 1583-1593 (2024)
Abstract The cascode gallium nitride high electron mobility transistors (GaN HEMTs) are very vulnerable to self‐sustained turn‐off oscillation due to their cascode configuration. This paper presents a design approach for the RC snubber of cascode
Externí odkaz:
https://doaj.org/article/dbc93eee0c7645958d34147aca7d049a
Autor:
Lukas Bergmann, Mark‐M. Bakran
Publikováno v:
IET Power Electronics, Vol 17, Iss 7, Pp 789-801 (2024)
Abstract This article presents the design and experimental validation of a novel semiconductor area optimised 3300 V half bridge with Silicon Carbide (SiC) MOSFETs for HVDC converters. Based on a loss simulation, the problem statement is provided. On
Externí odkaz:
https://doaj.org/article/2a9b6b5f889e44109c2c4353b62e6c05
Publikováno v:
IET Power Electronics, Vol 17, Iss 7, Pp 878-889 (2024)
Abstract Silicon Carbide (SiC) Gate Turn‐off (GTO) thyristor is regarded as a promising option for pulsed power applications; however, the formation of high di/dt has been constrained by the slow current rise transient phase and the turn‐on curre
Externí odkaz:
https://doaj.org/article/a053026151ac4f13a69146130df9c27f
Publikováno v:
Electronics Letters, Vol 60, Iss 17, Pp n/a-n/a (2024)
Abstract We report the first‐time measurement of the electron‐hole pair (ehp) creation energy (Wehp) in novel Cd0.9Zn0.1Te0.98Se0.02 (CZTS) quaternary semiconductor. CZTS in single crystalline form is poised to be the future of large‐volume roo
Externí odkaz:
https://doaj.org/article/b65dd832d6ba46d7aaf32d7f1d540b51
Autor:
Dittrich, Th. a, Parisini, A. b, ⁎, Pavesi, M. b, Baraldi, A. b, Sacchi, A. b, Mezzadri, F. c, d, Mazzolini, P. b, d, Bosi, M. d, Seravalli, L. d, Bosio, A. b, Fornari, R. b, d
Publikováno v:
In Surfaces and Interfaces August 2024 51
Autor:
Henry Collins, Emre Akso, Christopher J. Clymore, Kamruzzaman Khan, Robert Hamwey, Nirupam Hatui, Matthew Guidry, Stacia Keller, Umesh K. Mishra
Publikováno v:
Electronics Letters, Vol 60, Iss 13, Pp n/a-n/a (2024)
Abstract The authors report a novel structure to improve the high‐frequency performance of nitrogen‐polar GaN deep‐recess high electron mobility transistors (HEMTs) wherein a timed plasma etch was used to tailor the profile of the gate dielectr
Externí odkaz:
https://doaj.org/article/4ef82fba092b4ef8a972ae30dc12bb56
Autor:
Wei, Xinru a, 1, Zhang, Guojun a, 1, Lv, Yipin a, Ma, Rongwei a, Yang, Yuejiao a, Wang, Fangfang a, Hang, Lifeng b, ⁎, Kang, Baotao a, ⁎
Publikováno v:
In Diamond & Related Materials June 2024 146
Autor:
Han, Yu-Ze a, Tian, Ye-Chao a, Ji, Wen-Xiang a, Li, Wen-Bo b, Xue, Xiao-Fei c, Dong, Yue-Qun c, Guan, Chun-Yu c, Zhou, Dong d, Li, Wen-Tao a, ⁎, Lu, Hai d, Li, Ai-Min a
Publikováno v:
In Sensors and Actuators: B. Chemical 15 March 2024 403
Autor:
A. S. Efimov
Publikováno v:
Известия высших учебных заведений России: Радиоэлектроника, Vol 26, Iss 4, Pp 33-55 (2023)
Introduction. Enhanced performance of electronic systems can be achieved by heterogeneous integration of different semiconductor technologies. The benefits of heterogeneous integration become obvious when close connections between the devices are pro
Externí odkaz:
https://doaj.org/article/bd35e0f08fc44794a1c4f89b16244944
Autor:
Bufan Shi, Anna Isabel Ramones, Yingxu Liu, Haoran Wang, Yu Li, Stefan Pischinger, Jakob Andert
Publikováno v:
IET Power Electronics, Vol 16, Iss 12, Pp 2103-2120 (2023)
Abstract Compared with silicon‐based Insulated Gate Bipolar Transistors (IGBTs), silicon carbide (SiC) Metal‐Oxide‐Semiconductor Field‐Effect Transistors (MOSFETs) are characterized by higher operating temperatures, switching speeds and switc
Externí odkaz:
https://doaj.org/article/871166b1382144328556da1af2cc6b51