Zobrazeno 1 - 10
of 221
pro vyhledávání: '"WEN-HSIEN HUANG"'
Publikováno v:
Inventions, Vol 9, Iss 4, p 81 (2024)
This study developed a risk assessment tool for contract capacity optimization problems using the ant colony optimization and auto-regression model. Based on the historical data of demand consumption, the Least Square algorithm, the Recursive Levinso
Externí odkaz:
https://doaj.org/article/44cd2e83f4b34f9980349b15407b261e
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 12, Pp n/a-n/a (2023)
Abstract A pulsed laser annealing method is utilized to directly synthesize nickel silicide (NiSi) as a contact material to improve the contact of electric devices. Three laser wavelengths, 355 nm (ultraviolet laser), 532 nm (green laser), and 1064 n
Externí odkaz:
https://doaj.org/article/f64d202f63564b9997473fb527c58ce5
Autor:
Catherine Langpoklakpam, An-Chen Liu, Neng-Jie You, Ming-Hsuan Kao, Wen-Hsien Huang, Chang-Hong Shen, Jerry Tzou, Hao-Chung Kuo, Jia-Min Shieh
Publikováno v:
Micromachines, Vol 14, Iss 3, p 576 (2023)
In this study, we report a low ohmic contact resistance process on a 650 V E-mode p-GaN gate HEMT structure. An amorphous silicon (a-Si) assisted layer was inserted in between the ohmic contact and GaN. The fabricated device exhibits a lower contact
Externí odkaz:
https://doaj.org/article/93338f7dd6d141c7b2dd805a523717ef
Autor:
Ying-Chun Shen, Cheng-Yu Lee, Hsing-Hsiang Wang, Ming-Hsuan Kao, Po-Cheng Hou, Yen-Yu Chen, Wen-Hsien Huang, Chang-Hong Shen, Yu-Lun Chueh
Publikováno v:
ACS Nano. 17:2019-2028
Autor:
Tsung-Ta Wu, Wen-Hsien Huang, Chih-Chao Yang, Hung-Chun Chen, Tung-Ying Hsieh, Wei-Sheng Lin, Ming-Hsuan Kao, Chiu-Hao Chen, Jie-Yi Yao, Yi-Ling Jian, Chiung-Chih Hsu, Kun-Lin Lin, Chang-Hong Shen, Yu-Lun Chueh, Jia-Min Shieh
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-11 (2017)
Abstract Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based MOSFETs with ON-
Externí odkaz:
https://doaj.org/article/dfca7c0d50a149839d75f7508a8ac08d
Autor:
Wen-Hsien Huang
Publikováno v:
Health Communication. 38:1490-1499
Injurant anthropomorphism is defined as the anthropomorphism of disease-causing agents with humanlike characteristics, emotions, intentions, or behavior. More and more health product brands and health care organizations are depicting disease causing
Autor:
Wen-Hsien Huang, Chun-Ming Yang
Publikováno v:
European Journal of Marketing, 2015, Vol. 49, Issue 7/8, pp. 1326-1342.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/EJM-08-2014-0525
Autor:
Kai-Chi Chuang, Huang-Chung Cheng, Wei-Shuo Li, Hao-Tung Chung, Chun-Ting Chen, Yu-Wei Liu, Jun-Dao Luo, Kuan-Neng Chen, Wen-Hsien Huang, Chan-Yu Liao, Jia-Min Shieh, Yi-Shao Li
Publikováno v:
IEEE Electron Device Letters. 42:164-167
This letter reports the fabrication of polycrystalline silicon (poly-Si) tunneling field effect transistors (Tunneling FETs) using green nanosecond laser crystallization (GLC). During the GLC process, the Si is full-melted by laser scanning, hence th
Autor:
Po-Cheng Hou, Wen-Hsien Huang, Ming-Hsuan Kao, Hsing-Hsiang Wang, Jia-Min Shieh, Chang-Hong Shen, Fu-Ming Pan, Li Chang
Publikováno v:
ECS Journal of Solid State Science & Technology; Jun2022, Vol. 11 Issue 6, p330-335, 6p
Autor:
Jung-En Tsai, Kuei-Shu Chang-Liao, Yan-Lin Li, Wen-Hsien Huang, Chang-Hong Shen, Kuan-Chi Chou, Tzu-Cheng Chao, Jia-Min Shieh, Hsin-Kai Fang
Publikováno v:
IEEE Electron Device Letters. 41:1766-1769
Operation characteristics of polycrystalline germanium (poly-Ge) tri-gate junctionless (JL) charge-trapping (CT) flash memory devices with stacked tunneling layer were studied in this work. The programming speeds of poly-Ge tri-gate JL flash device w