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pro vyhledávání: '"W.T. Lindley"'
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Autor:
G. A. Lincoln, B.A. Vojak, W. J. Piacentini, L. J. Mahoney, K. B. Nichols, W.T. Lindley, Michael W. Geis, N. N. Efremow, A. Chu
Publikováno v:
Journal of Vacuum Science and Technology. 20:786-789
We have developed a new anisotropic dry etching technique for GaAs that results in etched surfaces of sufficient quality for many device applications. In this technique a chemically reactive gas from a jet and an ion beam from a Kaufman ion source ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d3bd23231ae32b42c6ecad6880171f8
https://doi.org/10.1116/1.571483
https://doi.org/10.1116/1.571483
Autor:
W.T. Lindley, G.A. Lincoln, N. P. Economou, Carl O. Bozler, R.W. McClelland, R.A. Murphy, G. D. Johnson, G.D. Alley, D.C. Flanders, Jack P. Salerno, B. A. Vojak, K. B. Nichols
Publikováno v:
Journal of Applied Physics. 54:3554-3560
Transmission electron microscopy has been employed to characterize GaAs permeable base transistor structures. Submicrometer‐period tungsten base gratings fabricated on GaAs substrates by using either liftoff or etching techniques have been studied.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12e419a8c6c248a0e5e683b6665150bb
https://doi.org/10.1063/1.332423
https://doi.org/10.1063/1.332423
Publikováno v:
Solid-State Electronics. 16:529-534
N-p junction photodiodes in PbS have been fabricated using Sb+ ion implantation to create the n-type layer. At 300°K, 15-mil-square diodes have shown typical zero-bias resistances of 200 Ω corresponding to a resistance-area product of 0.28 Ω-cm2.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16a95e5cf7cefa256d331c70b36ce40a
https://doi.org/10.1016/0038-1101(73)90193-7
https://doi.org/10.1016/0038-1101(73)90193-7
Publikováno v:
Solid-State Electronics. 13:755-758
We have observed that proton bombardment can be used to create high resistivity layers in p -ZnTe and have used this technique to fabricate avalanching MIS electroluminescent diodes. The breakdown voltages for these diodes ranged from approximately 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1435fe285ec0bb460bba6ab67d060362
https://doi.org/10.1016/0038-1101(70)90063-8
https://doi.org/10.1016/0038-1101(70)90063-8
Publikováno v:
Solid-State Electronics. 12:209-214
Proton bombardment has been used to convert both p- and n-type GaAs into high resistivity material. It will be shown that this technique is useful for isolating junction devices and fabricating arrays. The average carrier concentration in the bombard
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5d616850e0f2f8565d8650f5e8281b8
https://doi.org/10.1016/0038-1101(69)90001-x
https://doi.org/10.1016/0038-1101(69)90001-x
Publikováno v:
Solid-State Electronics. 15:403-407
N-p junction photovoltaic detectors in Pb0.88Sn0.12Te and laser diodes in both PbTe and Pb0.88Sn0.12Te fabricated using proton bombardment to create the n-type layer are reported. Zero-bias resistance area products as high as 1.4 Ω-cm2 at 77°K and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eded43840b4c4b4305823d35e35eda8b
https://doi.org/10.1016/0038-1101(72)90111-6
https://doi.org/10.1016/0038-1101(72)90111-6
Publikováno v:
IEEE Electron Device Letters. 7:41-43
Three-dimensional (3-D) structures have been fabricated incorporating power bipolar transistors in a Si substrate and metal-oxide-semiconductor field-effect transistors (MOSFET's) in an overlying silicon-on-insulator (SOI) film that was zone-melting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d821582a6fdd18598fe539c411098137
https://doi.org/10.1109/edl.1986.26285
https://doi.org/10.1109/edl.1986.26285
Publikováno v:
IEEE Transactions on Electron Devices. 32:2547-2548
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58c071b5d71cdb042694a6ead3460816
https://doi.org/10.1109/t-ed.1985.22360
https://doi.org/10.1109/t-ed.1985.22360
Autor:
B.E. Burke, W.T. Lindley
Publikováno v:
Electronics Letters. 13:521
A c.c.d. transversal-filter structure is described which is capable of processing signals at high data rates. The tap weights can be programmed as digital words. A 32-stage prototype device has been tested at clock rates up to 20 MHz; operation at ev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::849b0e9a495b3af035e127968bdc70d9
https://doi.org/10.1049/el:19770377
https://doi.org/10.1049/el:19770377