Zobrazeno 1 - 10
of 30
pro vyhledávání: '"W.S. Kuhn"'
Publikováno v:
Journal of Crystal Growth. 183:535-544
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0f439da928507e6fbfa23fc85f50fc0
https://doi.org/10.1016/s0022-0248(97)00507-1
https://doi.org/10.1016/s0022-0248(97)00507-1
Publikováno v:
Journal of The Electrochemical Society. 144:694-697
The heteroepitaxial growth of Ge on (100) Si in a horizontal, atmospheric pressure metallorganic vapor-phase epitaxy reactor is reported using germane GeH{sub 4} (0.1% in H{sub 2}). A particularly crucial parameter for germanium deposition on silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20b3cb3b4c05cce3e7a639b7eebd5f1e
https://doi.org/10.1149/1.1837470
https://doi.org/10.1149/1.1837470
Publikováno v:
Journal of Crystal Growth. 159:138-143
The pyrolysis of methylallyltellurium has been studied in an isothermal flow-tube reactor. The reaction products in H 2 and He carrier gases were analyzed using a quadrupole mass spectrometer. We compared MeTe-allyl decomposition kinetics with the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a6d43e9aabf520fa12b18af900be036
https://doi.org/10.1016/0022-0248(95)00848-9
https://doi.org/10.1016/0022-0248(95)00848-9
Publikováno v:
Applied Surface Science. 86:437-441
Photoassisted growth of ZnSe on (100) GaAs substrates by a metalorganic vapor-phase epitaxy process was carried out using dimethylzinc and ditertiarybutylselenide as precursors. Illuminating the surface of the layer during the growth with a high inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::183bbd6c9c9b34fe43791b7dd7185b5d
https://doi.org/10.1016/0169-4332(94)00456-0
https://doi.org/10.1016/0169-4332(94)00456-0
Publikováno v:
Materials Science Forum. :47-50
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ceb3ba90a0d0187e9527755e66696e1
https://doi.org/10.4028/www.scientific.net/msf.182-184.47
https://doi.org/10.4028/www.scientific.net/msf.182-184.47
Publikováno v:
Journal of Crystal Growth. 146:580-586
The kinetic growth limitation in atmospheric pressure metalorganic vapour phase epitaxy (MOVPE) of ZnSe was investigated using the selenium precursors methylallylselenide (MASe) and ditertiarybutylselenide (DTBSe). The onset of mass transfer limited
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acd9da063d95190eede1b22b695c1433
https://doi.org/10.1016/0022-0248(94)00542-7
https://doi.org/10.1016/0022-0248(94)00542-7
Autor:
Wolfgang Gebhardt, Hans Peter Wagner, M. Wörz, H. Dumont, C. Grattepain, Ouri Gorochov, B. Qu'Hen, K. Wolf, Andreas Rosenauer, Alain Lusson, W.S. Kuhn, T. Reisinger, S. Bauer, H. Stanzl
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 31:119-177
The crystalline structure, surface morphology, optical properties and purity of ZnTe layers grown by MOVPE were investigated. Various substrates, different combinations of metalorganics and various growth conditions were studied. The results of three
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80c34952aec6763141f1c49db15baec3
https://doi.org/10.1016/0960-8974(95)00018-6
https://doi.org/10.1016/0960-8974(95)00018-6
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 31:1-44
The growth of high quality II-VI devices by MOVPE is dependent upon the progress achieved in certain key research activities. Here, the precursors are the crucial point for a successful epitaxy. The metallorganics Et 2 Te, i Pr 2 Te, MeTe-allyl, Et 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0bb6acbd9d39748f981ffbd452706f9
https://doi.org/10.1016/0960-8974(95)00016-x
https://doi.org/10.1016/0960-8974(95)00016-x
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 31:45-117
We report on the MOVPE of ZnTe in two typical reactor geometries. Horizontal flow in rectangular tubes with even and tilted susceptors are compared with axisymetric vertical downward flow arrangements on even (horizontal) and tilted susceptors. Growt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa0557fe196f8831f20367d10563e977
https://doi.org/10.1016/0960-8974(95)00017-8
https://doi.org/10.1016/0960-8974(95)00017-8
Publikováno v:
Journal of Crystal Growth. 145:541-546
We report on metalorganic vapour phase epitaxy (MOVPE) growth of the IIa-VI compound MgTe and the variable band gap ternary semiconductor Zn 1−x Mg x Te. Bulk MgTe shows wurtzite type structure and is a direct band gap material (∼3.5 eV). The pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d05b1b9c370b22d765cb08c9dc60dc6a
https://doi.org/10.1016/0022-0248(94)91104-5
https://doi.org/10.1016/0022-0248(94)91104-5