Zobrazeno 1 - 10
of 138
pro vyhledávání: '"W.R. Curtice"'
Publikováno v:
IEEE Transactions on Electron Devices. 55:3555-3561
Adaptive biases are proposed for both the drain and the dummy gate of LDMOSFETs to improve their overall efficiency in amplification of highly modulated signals. At low input power, the drain bias is reduced to maintain high efficiency. At high input
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e060672c44cfaa056e3c52d75bcf4b06
https://doi.org/10.1109/ted.2008.2006542
https://doi.org/10.1109/ted.2008.2006542
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 8:193-202
For the first time, the effects of dummy-gate geometry and bias on breakdown and degradation of LDMOSFETs are quantified both theoretically and experimentally. First, the effects of dummy-gate geometry and bias are analyzed numerically by using a 2-D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e93cbde478dd46b2b502eb448be4300c
https://doi.org/10.1109/tdmr.2007.912274
https://doi.org/10.1109/tdmr.2007.912274
Publikováno v:
IEEE Transactions on Electron Devices. 54:580-588
The bias effects of dummy gate on drain current, resistance, capacitance, quasi-saturation, and breakdown of Si laterally diffused MOSFET transistor (LDMOSFET) are modeled and characterized. Two-dimensional numerical simulations are used to explain e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5dc92bae564f9ee13b97f2e53d2a7759
https://doi.org/10.1109/ted.2006.890586
https://doi.org/10.1109/ted.2006.890586
Autor:
W.R. Curtice, Dale McMorrow, Lan Hu Tran, Alvin R. Knudson, Joseph S. Melinger, A.B. Campbell, Stephen P. Buchner
Publikováno v:
Journal of Applied Physics. 84:690-703
We use picosecond laser pulses to investigate single event upsets and related fundamental charge collection mechanisms in semiconductor microelectronic devices and circuits. By varying the laser wavelength the incident laser pulses deposit charge tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c2e9543f420bb09d842baf7e70b88730
https://doi.org/10.1063/1.368124
https://doi.org/10.1063/1.368124
Autor:
Alvin R. Knudson, W.R. Curtice, Joseph S. Melinger, Lan Huu Tran, A.B. Campbell, Dale McMorrow, S. P. Buchner
Publikováno v:
IEEE Transactions on Nuclear Science. 45:1494-1500
The charge-collection processes of GaAs field-effect transistors are investigated as a function of the incident laser pulse energy via time-resolved charge-collection measurements and by two-dimensional computer simulation. The measurements and simul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38de66d449d5cb3ed1451941888da2a6
https://doi.org/10.1109/23.685229
https://doi.org/10.1109/23.685229
Autor:
Joseph S. Melinger, W.R. Curtice, S. P. Buchner, A.B. Campbell, Dale McMorrow, Alvin R. Knudson
Publikováno v:
IEEE Transactions on Nuclear Science. 44:2274-2281
AlGaAs/GaAs heterojunction bipolar transistors are investigated via time-resolved and time-integrated laser induced charge-collection measurements and by two-dimensional computer simulation. Both experiment and simulation results suggest that charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de4087d8fbea9f96145216968e243297
https://doi.org/10.1109/23.659046
https://doi.org/10.1109/23.659046
Autor:
Dale McMorrow, W.R. Curtice, A.B. Campbell, S. P. Buchner, Alvin R. Knudson, Joseph S. Melinger
Publikováno v:
IEEE Transactions on Nuclear Science. 43:2904-2912
Two-dimensional device simulations of GaAs MESFETs fabricated with a low-temperature grown GaAs (LT GaAs) buffer layer reveal a sensitive dependence of the charge-collection characteristics on various structural and operational parameters. Simulation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::277b06d5caae117aa9d824a2a234a5d0
https://doi.org/10.1109/23.556884
https://doi.org/10.1109/23.556884
Autor:
S. P. Buchner, Joseph S. Melinger, Lan Hu Tran, W.R. Curtice, Alvin R. Knudson, A.B. Campbell, Todd R. Weatherford, Dale McMorrow
Publikováno v:
IEEE Transactions on Nuclear Science. 42:1837-1843
The use of a low temperature grown GaAs (LT GaAs) buffer layer in GaAs FETs is shown via computer simulation and experimental measurement to reduce ion-induced charge collection by two to three orders of magnitude. This reduction in collected charge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc992ea9c87224b164f87c9cd179d567
https://doi.org/10.1109/23.488787
https://doi.org/10.1109/23.488787
Autor:
Todd R. Weatherford, A.B. Campbell, Joseph S. Melinger, Alvin R. Knudson, Dale McMorrow, L.H. Tran, W.R. Curtice
Publikováno v:
IEEE Transactions on Nuclear Science. 39:1657-1664
Ion and picosecond laser induced charge-collection measurements performed as a function of temperature and device bias conditions reveal the significant changes that occur in the charge collection transients as a function of these parameters. The tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b312e841df7bb5df00ebddddaee6df15
https://doi.org/10.1109/23.211350
https://doi.org/10.1109/23.211350
Autor:
W.R. Curtice
Publikováno v:
MTT-S International Microwave Symposium Digest.
Transferred-electron oscillators capable of single frequency operation at any of a large number of closely spaced frequencies are being developed for microwave frequency memory applications. Switching between different frequency states has been achie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8706e7caeececd90488ad16cc2fd2c5b
https://doi.org/10.1109/mwsym.1975.1123323
https://doi.org/10.1109/mwsym.1975.1123323