Zobrazeno 1 - 10
of 79
pro vyhledávání: '"W.R. Crain"'
Autor:
Ruth M. Skoug, Herbert O. Funsten, H. Henkel, M. Reno, D. J. Mabry, Michelle F. Thomsen, C. Urdiales, James L. Burch, Mike Gruntman, M.K. Young, S. M. Ritzau, Kai Viherkanto, D. T. Everett, B. Blake, S. Weidner, R. Harbaugh, Pontus Brandt, L. M. Friesen, J. H. Clemmons, Uwe Nass, T. S. Sotirelis, R. W. Harper, Earl Scime, J. R. Baldonado, Christer Holmlund, S. Pope, Donald G. Mitchell, David J. McComas, Robert DeMajistre, G. Lay, D. M. Delapp, Jochen H. Zoennchen, Phil Valek, Edmond C. Roelof, W.R. Crain, C. J. Pollock, Tomi Ylikorpi, M. Sivjee, Frederic Allegrini, Jerry Goldstein, Hans-Jörg Fahr
Publikováno v:
McComas, D J, Allegrini, F, Baldonado, J, Blake, B, Brandt, P C, Burch, J, Clemmons, J, Crain, W, Delapp, D, DeMajistre, R, Everett, D, Fahr, H, Friesen, L, Funsten, H, Goldstein, J, Gruntman, M, Harbaugh, R, Harper, R, Henkel, H, Holmlund, C, Lay, G, Mabry, D, Mitchell, D, Nass, U, Pollock, C, Pope, S, Reno, M, Ritzau, S, Roelof, E, Scime, E, Sivjee, M, Skoug, R, Sotirelis, T S, Thomsen, M, Urdiales, C, Valek, P, Viherkanto, K, Weidner, S, Ylikorpi, T, Young, M & Zoennchen, J 2009, ' The two wide-angle imaging neutral-atom spectrometers (TWINS) NASA mission-of-opportunity ', Space Science Reviews, vol. 142, no. 1-4, pp. 157-231 . https://doi.org/10.1007/s11214-008-9467-4
Two Wide-angle Imaging Neutral-atom Spectrometers (TWINS) is a NASA Explorer Mission-of-Opportunity to stereoscopically image the Earth’s magnetosphere for the first time. TWINS extends our understanding of magnetospheric structure and processes by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e892ceb973f6fdabbc956d7da13e9227
https://doi.org/10.1007/s11214-008-9467-4
https://doi.org/10.1007/s11214-008-9467-4
Publikováno v:
IEEE Transactions on Nuclear Science. 45:2475-2482
SEU sensitivity of microcircuits to relativistic heavy ions is compared to that measured with low energy ions of comparable LET values. Multiple junction charge collection in a complex circuit seems to mask the effect of varying charge generations du
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f95ee0a87ce66eb4ccf105f17c78d8f0
https://doi.org/10.1109/23.736488
https://doi.org/10.1109/23.736488
Autor:
M.C. Maher, S.D. Pinkerton, K.B. Crawford, S.H. Penzin, Steven C. Moss, R. Koga, Stephen LaLumondiere, W.R. Crain
Publikováno v:
IEEE Transactions on Nuclear Science. 44:2325-2332
The single event upset (SEU) sensitivity of certain types of linear microcircuits is strongly affected by bias conditions. For these devices, a model of upset mechanism and a method for SEU control have been suggested.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aa9365e3604b0079aa0c903407f4898
https://doi.org/10.1109/23.659055
https://doi.org/10.1109/23.659055
Publikováno v:
IEEE Transactions on Nuclear Science. 43:2968-2973
SEE testing was performed on pulse width modulation (PWM) controllers which are commonly used in switching mode power supply systems. The devices are designed using both Set-Reset (SR) flip-flops and Toggle (T) flip-flops which are vulnerable to sing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5dcb309c24b867667ba4ce619311cdc
https://doi.org/10.1109/23.556893
https://doi.org/10.1109/23.556893
Publikováno v:
IEEE Transactions on Nuclear Science. 43:2982-2989
Digital signal processors (DSPs) sensitive to SEE may be utilized in some space-borne systems, in which the effects of cosmic-rays and trapped protons are limited. Thorough ground testing for SEE is essential in designing an SEE tolerant system, with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b42869cf63a3430bf51ec9ae9f9de9
https://doi.org/10.1109/23.556895
https://doi.org/10.1109/23.556895
Publikováno v:
IEEE Transactions on Nuclear Science. 43:931-935
High and low resistive load versions of Micron Technology's MT5C1008C (128K/spl times/8) and MT5C2561C (256K/spl times/1) SRAMs were tested for SEU vulnerability. Contrary to computer simulation results, SEU susceptibility decreased with increasing r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::74dbd484f5ec1321ec9c521f5d6a1b62
https://doi.org/10.1109/23.510736
https://doi.org/10.1109/23.510736
Publikováno v:
IEEE Transactions on Nuclear Science. 42:1948-1956
We show that the thresholds for picosecond (psec) laser pulse-induced latchup and energetic particle-induced latchup are well correlated over a range of bulk CMOS test structures designed to be susceptible to latchup. The spatial length of the latchu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d782ea4387889661ccf04dd7756d662
https://doi.org/10.1109/23.489239
https://doi.org/10.1109/23.489239
Autor:
S.J. Hansel, K.B. Crawford, J.F. Kirshman, S.D. Pinkerton, W.R. Crain, Steven C. Moss, S.H. Penzin, R. Koga, M.C. Maher
Publikováno v:
IEEE Transactions on Nuclear Science. 42:1823-1828
This paper presents single event upset (SEU) and latchup test results for selected Emitter Coupled Logic (ECL) microcircuits, including several types of low capacity SRAMs and other memory devices. The high speed of ECL memory devices makes them attr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88f3d1e180205ccf5799028659f479d9
https://doi.org/10.1109/23.488785
https://doi.org/10.1109/23.488785
Autor:
D.C. Mayer, Steven C. Moss, R. Koga, K.B. Crawford, S.J. Hansel, Stephen LaLumondiere, W.R. Crain, S.D. Pinkerton
Publikováno v:
IEEE Transactions on Nuclear Science. 40:1838-1844
Selected analog devices were tested for heavy-ion-induced single event upset (SEU). The results of these tests are presented, likely upset mechanisms are discussed, and standards for the characterization of analog upsets are suggested. The OP-15 oper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2447a9538ad2b7420e7320c09fc12115
https://doi.org/10.1109/23.273472
https://doi.org/10.1109/23.273472
Publikováno v:
IEEE Transactions on Nuclear Science. 39:1685-1692
Application-specific integrated circuits (ASICs) offer a number of advantages over traditional multicomponent microcircuits, including reductions in both size and power dissipation, and are therefore prime candidates to replace such microcircuits in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::686b4e34c09081f8157bbfdea5652b61
https://doi.org/10.1109/23.211354
https://doi.org/10.1109/23.211354