Zobrazeno 1 - 10
of 29
pro vyhledávání: '"W.P.-N. Chen"'
Publikováno v:
IEEE Transactions on Nanotechnology. 9:248-253
This paper investigates and analyzes the matching properties of nanoscale strained MOSFETs under various bias conditions. Through a comprehensive comparison between coprocessed strained and unstrained PMOSFETs, the impact of process-induced uniaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da7fe670951e4fc9e520f1be719ec9b4
https://doi.org/10.1109/tnano.2009.2025596
https://doi.org/10.1109/tnano.2009.2025596
Publikováno v:
IEEE Transactions on Electron Devices. 56:284-290
This paper presents a comprehensive investigation of the analog performance for uniaxial strained PMOSFETs with sub -100 nm gate length. Through a comparison between co-processed strained and unstrained devices regarding important analog metrics such
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a28b56422230afe13fcd124e4087624
https://doi.org/10.1109/ted.2008.2010590
https://doi.org/10.1109/ted.2008.2010590
Publikováno v:
IEEE Transactions on Nanotechnology. 7:538-543
This paper provides an experimental assessment of Coulomb scattering mobility for advanced strained devices. By accurate short-channel mobility extraction, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e7c6156eb5abcbbafa8431a3eddb2b0
https://doi.org/10.1109/tnano.2008.2004771
https://doi.org/10.1109/tnano.2008.2004771
Publikováno v:
Semiconductor Science and Technology. 22:404-407
This paper investigates the analogue performance of process-induced-strained PMOSFETs for system-on-a chip applications. Through a comparison between co-processed strained and unstrained PMOSFETs regarding important analogue metrics such as transcond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9babc4d77dc0ad3953b4f179743f1ce7
https://doi.org/10.1088/0268-1242/22/4/019
https://doi.org/10.1088/0268-1242/22/4/019
Publikováno v:
IEEE Transactions on Electron Devices. 58:4427-4429
This paper investigates the temperature dependence of phonon-scattering-limited mobility μPH for advanced short-channel strained pMOS devices. By using the split CV method and Matthiessen's rule, surface-roughness-limited mobility μSR and μPH are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::301203945b4b86e6a7f1f96d0f1ea8aa
https://doi.org/10.1109/ted.2011.2167153
https://doi.org/10.1109/ted.2011.2167153
Publikováno v:
IEEE Electron Device Letters. 32:240-242
This letter reports new findings on the temperature dependence of mismatching properties in nanoscale uniaxial-strained pMOSFETs. Our results reveal that the temperature dependence of drain current mismatch can be modulated by uniaxial strain. In the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8de6e6056233a944c8e3b46f4a88fe46
https://doi.org/10.1109/led.2010.2095818
https://doi.org/10.1109/led.2010.2095818
Publikováno v:
IEEE Electron Device Letters. 32:113-115
This letter provides an experimental assessment of surface-roughness-scattering-limited mobility (μSR) under process-induced uniaxial strain and compares the strain sensitivity between μSR and phonon-scattering-limited mobility (μPH). By an accura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d128d9f897ca9981cae5fc42a68290ea
https://doi.org/10.1109/led.2010.2090126
https://doi.org/10.1109/led.2010.2090126
Publikováno v:
IEEE Electron Device Letters. 31:414-416
This letter provides an experimental assessment of temperature dependence of mobility for advanced short-channel strained devices. By accurate split C-V mobility extraction under various temperatures, we examine the impact of process-induced uniaxial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2a21b20d8f68bb3906a956a03b64f04
https://doi.org/10.1109/led.2010.2044553
https://doi.org/10.1109/led.2010.2044553
Publikováno v:
IEEE Electron Device Letters. 31:497-499
This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (V gst) regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a699b658b20a8a2bb28bbca5811c53d
https://doi.org/10.1109/led.2010.2044138
https://doi.org/10.1109/led.2010.2044138
Publikováno v:
IEEE Electron Device Letters. 30:672-674
This letter investigates the low-frequency noise characteristics and reports a new mechanism for uniaxial strained PMOSFETs. Through a comparison of the input-referred noise and the trap density of the gate dielectric/semiconductor interface between
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd1606ea03a3b27406e89c3132d60252
https://doi.org/10.1109/led.2009.2020069
https://doi.org/10.1109/led.2009.2020069