Zobrazeno 1 - 10
of 338
pro vyhledávání: '"W.P. Kang"'
Publikováno v:
Diamond and Related Materials. 23:120-124
This article reports successful fabrication and characterization of vacuum microelectronic OR gate logic using nanodiamond lateral diode structures. Two identical sets of four nanodiamond lateral diodes with different numbers of emitters, viz., 125,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c15c3bdb7747eb0faeea1ce193389c87
https://doi.org/10.1016/j.diamond.2012.01.030
https://doi.org/10.1016/j.diamond.2012.01.030
Publikováno v:
Diamond and Related Materials. 22:142-146
A vacuum field emission (VFE) transistor in vertical configuration with nitrogen-incorporated nanocrystalline-diamond emitters is presented. A novel self-aligned gate partition technique was utilized to construct the VFE device. The gate-controlled m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4374568b3f3d223026adccd47da340e3
https://doi.org/10.1016/j.diamond.2011.12.020
https://doi.org/10.1016/j.diamond.2011.12.020
Autor:
Norman Tolk, Lawrence F. Allard, Dorothy W. Coffey, Kinga A. Unocic, W.P. Kang, James E. Wittig, Travis C. Wade, Jimmy L. Davidson, N. Ghosh
Publikováno v:
Diamond and Related Materials. 22:29-32
Diamond cold-cathode devices have demonstrated significant potential as electron field emitters. Ultra-sharp diamond pyramidal tips (~ 5 nm tip radius) have been fabricated, and show improvement in emission when compared to conventional field emitter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bc7622a5a202e26113ee404897b613f
https://doi.org/10.1016/j.diamond.2011.11.007
https://doi.org/10.1016/j.diamond.2011.11.007
Publikováno v:
Microelectronic Engineering. 88:2924-2929
This paper describes the electrical characteristics of lateral field emission vacuum microelectronic devices comprised of nanodiamond in two terminal (diode) and three terminal (transistor) cathode–gate–anode configuration and their resistance to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8afada953d84bc3aeacd7dd748298eb
https://doi.org/10.1016/j.mee.2011.03.161
https://doi.org/10.1016/j.mee.2011.03.161
Publikováno v:
Diamond and Related Materials. 19:252-255
Nitrogen incorporated nanodiamond film is known to aid in promoting enhanced electron emission via the induced graphitic behavior both in the bulk material and also the surface of the film. Since electron emission current is inversely proportional to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5657c61df98fddbb4ef169ed212f572a
https://doi.org/10.1016/j.diamond.2009.10.014
https://doi.org/10.1016/j.diamond.2009.10.014
Publikováno v:
Diamond and Related Materials. 19:247-251
This article reports the fabrication and characterization of a CNT field emission cell with a built-in electron beam source for electron excited amplified field emission. A monolithic lateral field emission cell (FEC) with integrated metallic anode w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0461a485e242b76b6e49b30c41c2380
https://doi.org/10.1016/j.diamond.2009.10.015
https://doi.org/10.1016/j.diamond.2009.10.015
Publikováno v:
Diamond and Related Materials. 18:191-195
Nitrogen-induced shallow defects on nanodiamond films have been systematically characterized as a function of growth parameters using micro-Raman, SEM, XPS, and field emission measurements. Distinct peaks indicating diamond and graphite phases were o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c7c51fdda51dd7205df7b2c30b1caaf
https://doi.org/10.1016/j.diamond.2008.12.003
https://doi.org/10.1016/j.diamond.2008.12.003
Publikováno v:
Diamond and Related Materials. 18:200-205
The electron field emission properties of nano-crystalline diamond (ND) thin-film can be enhanced through nitrogen incorporation, resulting in increased sp2 carbon concentration leading to low binding energy beneficial for electron field emission. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0454f081fb26513c8b7f1489aef3a1e5
https://doi.org/10.1016/j.diamond.2008.11.017
https://doi.org/10.1016/j.diamond.2008.11.017
Publikováno v:
Diamond and Related Materials. 17:1808-1811
Nitrogen-incorporated nanocrystalline diamond, offering a high field enhancement factor (β), has been applied in the development of monolithic lateral emitter diodes. The dependence of the emission current on the interelectrode spacing in the device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78e8743afa6c6bb5d72c24b43aadc4fa
https://doi.org/10.1016/j.diamond.2008.04.004
https://doi.org/10.1016/j.diamond.2008.04.004
Publikováno v:
Diamond and Related Materials. 17:552-555
A novel integrated vacuum field emission (VFE) differential amplifier (diff-amp) utilizing carbon nanotube (CNT) emitters has been developed. A dual-mask microfabrication process was employed to achieve a VFE diff-amp by integrating identical CNT VFE
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8984c3fa1c0cda231d9465a52501dc9f
https://doi.org/10.1016/j.diamond.2007.12.026
https://doi.org/10.1016/j.diamond.2007.12.026