Zobrazeno 1 - 10
of 49
pro vyhledávání: '"W.O. Barnard"'
Surface composition of Ru containing duplex stainless steel after passivation in non-oxidizing media
Autor:
P. Baradlai, M.J. van Staden, L. Tomcsanyi, G. Myburg, J.H. Potgieter, W.O. Barnard, C.W. Louw, Kálmán Varga
Publikováno v:
Applied Surface Science. 136:29-35
In this paper, results obtained by surface analysis (Auger Electron Spectroscopy (AES) and X-ray Photoelectron Spectroscopy (XPS)) studies performed on the passive layers that formed spontaneously on duplex stainless steels (DSSs) and Ru containing (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85bc37f67caa0e4ce427d3227c7a8d2e
https://doi.org/10.1016/s0169-4332(98)00326-2
https://doi.org/10.1016/s0169-4332(98)00326-2
Publikováno v:
Electrochimica Acta. 42:25-35
In this work, time, concentration and potential dependence of Cl− and HSO4−SO42− accumulations on two austenitic stainless steels (AISI 316L + 0.5%Ru and 08X18H10T (GOST 5632-61) which corresponds to AISI 304) are studied by an in situ radiotra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16dcfb4f01f14c8e952badc869f038c8
https://doi.org/10.1016/0013-4686(96)00163-6
https://doi.org/10.1016/0013-4686(96)00163-6
Publikováno v:
Journal of Electronic Materials. 25:1695-1702
In this paper, some aspects that determine the properties of Schottky and ohmic contacts to GaAs are discussed. For Schottky barrier diodes (SBD), we present results of a comprehensive study involving 41 different metals. We pay special attention to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2befe7c42d40dba18020b24e4f7dfd56
https://doi.org/10.1007/s11664-996-0024-1
https://doi.org/10.1007/s11664-996-0024-1
Electrical characterization of sputter-deposition-induced defects in epitaxially grown n-GaAs layers
Publikováno v:
Vacuum. 46:1087-1090
Sputter deposition of metal Schottky contacts on semiconductors creates damage at and below the surface, often resulting in inferior rectification properties. We have employed deep-level transient spectroscopy (DLTS) to characterize the defects intro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16ea9dc9cf6f654d6b49066d2cbb5985
https://doi.org/10.1016/0042-207x(95)00112-3
https://doi.org/10.1016/0042-207x(95)00112-3
Publikováno v:
Vacuum. 46:893-897
Wet chemical passivation of InP was performed in an acid solution that contained Ru ions in solution. Results showed a drastic increase in the Schottky barrier height of Ru contacts from 0.49 eV before passivation to about 0.88 eV after passivation a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a0dc6b9b5f07c9ca074676a156fac0a
https://doi.org/10.1016/0042-207x(95)00066-6
https://doi.org/10.1016/0042-207x(95)00066-6
Publikováno v:
Materials Science Forum. :759-768
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fadf8198212d64d5337bf66225d7f6e4
https://doi.org/10.4028/www.scientific.net/msf.185-188.759
https://doi.org/10.4028/www.scientific.net/msf.185-188.759
Publikováno v:
Thin Solid Films. 235:163-168
Ti and Pt Schottky contacts were electron-beam evaporated at various rates on n-GaAs and evaluated using conventional I – V measurements. In addition, a numerical method from which the contact resistance of the Schottky metal-GaAs contact can be de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7a34e66156a9381283d4725805931ad
https://doi.org/10.1016/0040-6090(93)90260-v
https://doi.org/10.1016/0040-6090(93)90260-v
Publikováno v:
Journal of Applied Physics. 74:4339-4342
Undoped n‐GaAs, grown by organometallic vapor phase epitaxy, was irradiated with neutrons from a clinical p(66)/Be(40) source for a range of fluences. Deep level transient spectroscopy (DLTS), employing Pd Schottky barrier diodes, indicated that fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f04ec8b614d4e8aa3129806bfd3a6041
https://doi.org/10.1063/1.354399
https://doi.org/10.1063/1.354399
Publikováno v:
Applied Surface Science. :515-519
In this study specific contact resistance (rc), Auger electron spectroscopy and morphology results are reported for Au/Pt/Ti, Au/Ni/Ti and Au/Ru/Ti ohmic contact systems to n-InP. These contacts were fabricated on Ar+ sputtered and chemically etched
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::faec945376c139fab2f1f8d587c3c225
https://doi.org/10.1016/0169-4332(93)90572-s
https://doi.org/10.1016/0169-4332(93)90572-s
Autor:
M. Hayes, Walter E. Meyer, C.W. Louw, G. Myburg, S. A. Goodman, W.O. Barnard, N. van den Berg, F.D. Auret
Publikováno v:
Applied Surface Science. :511-514
This paper deals with the outstanding electrical and structural properties of Ru-based Schottky and ohmic contacts fabricated by electron beam evaporation on n- and p+ -type GaAs, respectively. The effective and flatband barrier heights were evaluate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a3bc62fd647b43682722ba698b938c9
https://doi.org/10.1016/0169-4332(93)90571-r
https://doi.org/10.1016/0169-4332(93)90571-r