Zobrazeno 1 - 10
of 92
pro vyhledávání: '"W.J. Tsai"'
Publikováno v:
Brazilian Journal of Medical and Biological Research, Vol 43, Iss 10, Pp 931-941 (2010)
Refractory and relapsed leukemia is a major problem during cancer therapy, which is due to the aberrant activation of Wnt/β-catenin signaling pathway. Activation of this pathway is promoted by wingless (Wnt) proteins and induces co-activator β-cate
Externí odkaz:
https://doaj.org/article/d5d16f84e9c64009b88fb431e8479bd3
Autor:
Kai-An Chuang, Jyh-Fei Liao, Yuh-Chi Kuo, C.H. Lieu, W.J. Tsai, C.C. Wang, Yi-Chun Chen, Ming-Hsi Wu
Publikováno v:
Brazilian Journal of Medical and Biological Research. 43:931-941
Refractory and relapsed leukemia is a major problem during cancer therapy, which is due to the aberrant activation of Wnt/β-catenin signaling pathway. Activation of this pathway is promoted by wingless (Wnt) proteins and induces co-activator β-cate
Publikováno v:
International journal of geriatric psychiatry. 25(10)
Objectives To construct a training protocol for spaced retrieval (SR) and to investigate the effectiveness of SR and Montessori-based activities in decreasing eating difficulty in older residents with dementia. Methods A single evaluator, blind, and
Autor:
Alice W.J. Tsai, 蔡宛蓉
95
Due to the rapid growth of information technology, digital information has significantly increased over the Internet. The growing complexity of information and documents has made it hard for knowledge receivers to efficiently and accurately t
Due to the rapid growth of information technology, digital information has significantly increased over the Internet. The growing complexity of information and documents has made it hard for knowledge receivers to efficiently and accurately t
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/27188251629476889062
Autor:
G. Wu, I.C. Yang, C.Y. Lu, T.C. Lu, C.Y. Chin, C.H. Chen, Yao-Wen Chang, I.J. Huang, W.P. Lu, P.C. Chen, W.J. Tsai, K.C. Chen
Publikováno v:
2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop.
It is the first time to disclose that the similar interference from adjacent wordlines as found in floating-gate flash memory also exists in nitride-based flash memory. For sub-60nm nitride-based flash technologies, this interference effect cannot be
Publikováno v:
Journal of ethnopharmacology. 113(2)
Salvia miltiorrhiza Bunge (Tanshen), a traditional Chinese herbal medicine, is popularly used to treat cardiovascular disorders. In the present study, effects of tanshinlactone A (C(16)H(12)O(4); M.W. 268), newly discovered from Salvia miltiorrhiza,
Autor:
J. Ku, WenChin Ting, Hsuan-Ling Kao, Y.Y. Liao, W.J. Tsai, Tahui Wang, T.C. Lu, C.C. Yeh, T.F. Ou, Chih-Yuan Lu
Publikováno v:
2006 21st IEEE Non-Volatile Semiconductor Memory Workshop.
In this paper, two NAND-type PHINES flash memory architectures (1 bit/cell and physically 2 bit/cell) are proposed for mass storage applications. PHINES nitride trapping storage flash memory features high storage density, low power operation, good re
Publikováno v:
IEEE International Integrated Reliability Workshop Final Report, 2004.
A temperature accelerated model, which is based on the tunneling out of the thermally emitted electrons in the nitride layer via traps at the bottom oxide, is proposed to explain the retention loss behavior of high V/sub T/ states in MXVAND products
Autor:
J. Ku, Hung-Yueh Chen, Y.Y. Liao, N.K. Zous, Chih-Yuan Lu, Tahui Wang, W.J. Tsai, Wenchi Ting, C.C. Yeh, T.C. Lu
Publikováno v:
Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743).
As flash memories move toward the giga-bits era, several challenges limit their scalability. Floating gate flash memories face the problems of un-scalable tunnel oxide, and the last technology node of NOR flash was predicted to be 65 nm, based on the
Autor:
Chih-Yuan Lu, C.Y. Chin, T.C. Lu, J. Ku, Tahui Wang, W.J. Tsai, N.K. Zous, S.C. Pan, Y. J. Chen, M.S. Chen, W.P. Lu
Publikováno v:
Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2004 (IEEE Cat. No.04TH8743).
Trap generation is hard to estimate in a flash cell due to a dynamic stress field during program and erase (P/E). With the knowledge of the time-dependence of erase stress field based on Fowler-Nordheim (FN) tunneling, the V/sub T/ roll up during dyn