Zobrazeno 1 - 10
of 68
pro vyhledávání: '"W.J. Tanski"'
Publikováno v:
Proceedings., IEEE Ultrasonics Symposium.
A heterojunction acoustic charge transport (HACT) transversal filter with a 3.35- mu s integration time is reported. This is the longest acoustic charge transport device reported to date. The device operates at an acoustic clock frequency of 144 MHz
Publikováno v:
IEEE 1988 Ultrasonics Symposium Proceedings..
A brief description of the general acoustic charge transport (ACT) device and the operation of ACT devices is given. The application of GaAs-AlGaAs heterojunctions to ACT technology and the design of heterojunction ACT (HACT) devices is discussed. Th
Publikováno v:
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 41:416-418
Heterostructure Acoustic Charge Transport (HACT) devices have been fabricated with a new nondestructive sense (NDS) electrode structure that provides for the recovery of base-band signals without the use of an integrating capacitor. This electrode st
Autor:
W.J. Tanski
Publikováno v:
Proceedings of IEEE 48th Annual Symposium on Frequency Control.
This paper describes the design and performance of a dielectric resonator oscillator near 1.3 GHz. Unique features of this oscillator are the very low single side-band phase noise levels achieved, the effectiveness of the vibration isolation system i
Autor:
E.J. Branciforte, R.D. Carroll, W.D. Hunt, D.E. Cullen, S.W. Merritt, R.N. Sacks, W.J. Tanski
Publikováno v:
IEEE International Digest on Microwave Symposium.
Significant progress has been made recently in the development of heterostructure acoustic charge transport (HACT) technology. The HACT device concept is reviewed, details of the layer structure, monolithic integration, and acoustic performance are d
Autor:
R.D. Carroll, E.J. Branciforte, D.E. Cullen, S.W. Merritt, R.N. Sacks, T.W. Grudkowski, W.J. Tanski
Publikováno v:
IEEE Symposium on Ultrasonics.
Heterojunction acoustic charge transport (HACT) transversal filters have been successfully operated with a charge transport efficiency of 0.9996 for 6- mu s devices and >0.9999 for 3.3 mu s devices with uniform tap weighting. Device delays in excess
Autor:
D.E. Cullen, W.J. Tanski, S.W. Merritt, R.D. Carroll, R.N. Sacks, E.J. Branciforte, G.A. Peterson
Publikováno v:
IEEE Electron Device Letters. 11:107-109
A heterojunction acoustic-charge-transport (HACT) transversal filter with a 3.35- mu s-long array of output electrodes is discussed. The device operated at an acoustic clock frequency of 143.6 MHz with a charge transfer efficiency in excess of 0.9999
Publikováno v:
Journal of Surgical Research. 114:247
Autor:
E.J. Branciforte, R.D. Carroll, T. C. Eschrich, D.E. Cullen, R.N. Sacks, W.J. Tanski, S.W. Merritt
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:352
Molecular‐beam epitaxy (MBE) has been used to grow very high quality layers for the confinement and transport of electrons in heterostructure acoustic charge transport (HACT) devices. In this paper the HACT device concept is reviewed, details of th
Autor:
W.J. Tanski
Publikováno v:
IEEE Transactions on Sonics and Ultrasonics. 26:93-104
Abstruct-The design of highQ lowdistortion surface acoustic wave (SAW) resonators requires techniques and data for minimizing acoustic losses and accurate placementof the device resonance. Several aspects of one- and two-port SAW resonator design and