Zobrazeno 1 - 10
of 18
pro vyhledávání: '"W.J. Nagy"'
Autor:
K.H. Lee, M. P. Iannuzzi, A. Chen, I.C. Kizilyalli, W.J. Nagy, M.S. Carroll, T.E. Ham, T.L. Rich
Publikováno v:
IEEE Electron Device Letters. 18:120-122
In this paper, silicon npn bipolar transistors with indium-implanted base regions are discussed. Polysilicon emitter bipolar transistors are fabricated using a standard 0.5-/spl mu/m BIC-MOS process flow where the base BF/sub 2/ implant is replaced b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8244bfb92dcaad64598d9ad166d0aaf4
https://doi.org/10.1109/55.556100
https://doi.org/10.1109/55.556100
Publikováno v:
1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216).
A 0.25-/spl mu/m modular high-energy implanted BiCMOS (HEIBiC) technology has been developed for high-integration wireless-communication systems. It integrates an RF bipolar transistor into the CMOS process without disturbing the CMOS device characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e4d62ac6dc51a09e3e4d3d3bc0dc7e4
https://doi.org/10.1109/vlsit.1998.689212
https://doi.org/10.1109/vlsit.1998.689212
Autor:
Samir Chaudhry, Tony Ivanov, Y.F. Chyan, Robert Y.S. Huang, I.C. Kizilyalli, A. Chen, Samuel Suresh Martin, Michel Ranjit Frei, W.J. Nagy, Minseok Oh, M.J. Thoma, R.W. Dail, M.S. Carroll, C.A. King, V.D. Archer, W.T. Cochran, K.H. Lee, Kwok K. Ng
Publikováno v:
Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).
A 0.25-/spl mu/m modular high-energy implanted complementary BiCMOS (HEICBiC) technology has been developed for wireless-communication VLSIs. The technology demonstrates a high f/sub T/=52 GHz and a high f/sub T/BV/sub CEO/=160 GHz-V for single-poly
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f191a8503b79cc11cfcd2f26c6b3ce10
https://doi.org/10.1109/bipol.1998.741900
https://doi.org/10.1109/bipol.1998.741900
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
This study demonstrates the almost complete suppression of reverse short channel effect (RSCE) in a technology using high energy implanted tubs, compared to a technology using a conventional diffused tub. The conventional and high energy implanted (H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f199e2ca2000f2faa09be8ce38bc63b7
https://doi.org/10.1109/iedm.1997.650474
https://doi.org/10.1109/iedm.1997.650474
Autor:
M.S. Carroll, F.A. Stevie, P.A. Layman, A. Chen, C.S. Rafferty, S. Chaudhry, Y.F. Chyan, H.-H. Vuong, J.L. Lee, W.J. Nagy
Publikováno v:
SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest.
A computationally efficient technique to extract the diffused profiles and collector resistances of bipolar transistors formed via high energy implantation in a BiCMOS process is developed. The methodology uses two dimensional process and device simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::712dbb8d95244e0d67b12cb24a7a79f4
https://doi.org/10.1109/sispad.1997.621386
https://doi.org/10.1109/sispad.1997.621386
Autor:
Y.F. Chyan, S. Chaudhry, Y. Ma, A.S. Chen, M.S. Carroll, W.J. Nagy, J. Becerro, J.L. Lee, M.P. Iannuzzi, K.H. Lee
Publikováno v:
1997 Symposium on VLSI Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bb97104af3d56e1fdf7b4775e895f05
https://doi.org/10.1109/vlsit.1997.623682
https://doi.org/10.1109/vlsit.1997.623682
Publikováno v:
1993 International Symposium on VLSI Technology, Systems, and Applications Proceedings of Technical Papers.
Surface-channel PMOSFET's have been realized using a dopant-drive-out technique with WSi/sub x/ polycide gate. The advantages of this technique include (1) excellent thermal stability, (2) superior electrical device characteristics suitable for deep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b806388d8455f767bb4b1878c900673
https://doi.org/10.1109/vtsa.1993.263618
https://doi.org/10.1109/vtsa.1993.263618
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