Zobrazeno 1 - 10
of 33
pro vyhledávání: '"W.J. Kloosterman"'
Publikováno v:
2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
This paper presents an extensive method to determine the extraction region were the method (published earlier) that consistently accounts for self-heating and Early effect to accurately extract both base and thermal resistance of bipolar junction tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf24c6071f897c1faad57c7484f4b31e
https://doi.org/10.1109/bctm.2014.6981318
https://doi.org/10.1109/bctm.2014.6981318
Publikováno v:
IEEE Journal of Solid-State Circuits. 36:1390-1398
The collector epilayer is a crucial element in the behavior of modern bipolar transistors. Compact models for its description, like the Kull model, are therefore of crucial importance too. We give a Mextram-based improvement to these models for quasi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43b92d89b785f8ee735b83202895ee9f
https://doi.org/10.1109/4.944668
https://doi.org/10.1109/4.944668
Publikováno v:
2013 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
We extend the category of parameter extraction methods that utilize weak avalanche under fixed emitter current conditions to extract base resistance. Our new method consistently accounts for self-heating and Early effect so as to arrive at an accurat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::195ee53dbcd35b0b607e7e60996c05f6
https://doi.org/10.1109/bctm.2013.6798135
https://doi.org/10.1109/bctm.2013.6798135
Publikováno v:
IEEE Transactions on Electron Devices. 39:2553-2561
A lateral p-n-p compact model, suitable for computer-aided circuit design purposes, is introduced. In this formulation, called MODELLA, the equivalent circuit topology, analytical equations, and model parameters are derived directly from the physics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01dfef8abd1aa16a7f1a9037255ac41e
https://doi.org/10.1109/16.163463
https://doi.org/10.1109/16.163463
Publikováno v:
IEEE Transactions on Electron Devices. 39:2090-2098
An analytical model describing reverse and forward DC characteristics is presented. It serves as a basis for a compact model for circuit simulation purposes. The model is based on the solution of the hole continuity equation in the depletion layer of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fc9b2d6aadf7faa04a0c61d02414749
https://doi.org/10.1109/16.155882
https://doi.org/10.1109/16.155882
Autor:
W.J. Kloosterman, A.C.T. Aarts
Publikováno v:
IEEE Transactions on Electron Devices, 53(4), 897-902. Institute of Electrical and Electronics Engineers
The surface-potential-based compact transistor model, MOS Model 20 (MM20), has been extended with a quasi-saturation, an effect that is typical for LDMOS devices with a long drift region. As a result, MM20 extends its application range from low-volta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e8d6192984d40a96dd19ec1af5c6fe1
https://research.tue.nl/nl/publications/5a668343-81d0-40e0-89c1-e20d02b35c76
https://research.tue.nl/nl/publications/5a668343-81d0-40e0-89c1-e20d02b35c76
Publikováno v:
Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).
The base- and emitter resistance are important parameters of bipolar transistors and can be extracted from high frequency small signal admittance (Y) parameters. The circle impedance method and the two port method are examined and improvements are pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d4a2d435e7c18f7af8a405ef2beb237
https://doi.org/10.1109/bipol.1999.803534
https://doi.org/10.1109/bipol.1999.803534
Publikováno v:
Proceedings of the Bipolar Circuits and Technology Meeting.
The improved performance of the compact bipolar transistor model MEXTRAM is demonstrated by comparison with Gummel-Poon (GP) model calculations and measured DC and high-frequency data. The MEXTRAM model contains extended modeling of the collector epi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b22011e012c1f615a64e644f4233fffc
https://doi.org/10.1109/bipol.1989.69501
https://doi.org/10.1109/bipol.1989.69501
Publikováno v:
Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.
A very fast, robust and accurate parameter extraction method for bipolar compact models has been developed. Using a combination of simplified expressions and selected measurements the iterative solution of the full model equations (e.g. using a circu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e58c52bab83bce1e3ff92694f5d27ebf
https://doi.org/10.1109/bipol.1995.493869
https://doi.org/10.1109/bipol.1995.493869
Publikováno v:
Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212).
We present compact model formulations for the description of two effects seen in SiGe HBT's, but not in pure-Si transistors. One of them is the influence on the Early effect of a graded Ge-content in the base. The other is the neutral base recombinat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e457fb81c3f6481a076276f52d577104
https://doi.org/10.1109/bipol.2001.957853
https://doi.org/10.1109/bipol.2001.957853