Zobrazeno 1 - 10
of 709
pro vyhledávání: '"W.I. Milne"'
Autor:
F.J. Clough, W.I. Milne
Publikováno v:
Solid State Phenomena. :983-1022
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8745c7d6decef8d09ab52997cf57cc30
https://doi.org/10.4028/www.scientific.net/ssp.44-46.983
https://doi.org/10.4028/www.scientific.net/ssp.44-46.983
Autor:
S. Iacobucci, M. Fratini, A. Rizzo, F. Scarinci, Y. Zhang, M. Mann, C. Li, W.I. Milne, M.M. Gomati, S. Lagomarsino, G. Stefani
Publikováno v:
Applied physics letters 100 (2012).
info:cnr-pdr/source/autori:S. Iacobucci, M. Fratini, A. Rizzo, F. Scarinci, Y. Zhang, M. Mann; C. Li, W.I. Milne, M.M. Gomati, S. Lagomarsino, G. Stefani/titolo:"Angular distribution of field emitted electrons from vertically aligned carbon nanotube arrays"/doi:/rivista:Applied physics letters/anno:2012/pagina_da:/pagina_a:/intervallo_pagine:/volume:100
info:cnr-pdr/source/autori:S. Iacobucci, M. Fratini, A. Rizzo, F. Scarinci, Y. Zhang, M. Mann; C. Li, W.I. Milne, M.M. Gomati, S. Lagomarsino, G. Stefani/titolo:"Angular distribution of field emitted electrons from vertically aligned carbon nanotube arrays"/doi:/rivista:Applied physics letters/anno:2012/pagina_da:/pagina_a:/intervallo_pagine:/volume:100
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=cnr_________::752b6222d9e9911d774d2fefe443b7c5
http://www.cnr.it/prodotto/i/202280
http://www.cnr.it/prodotto/i/202280
Autor:
S.Z. Ali, P.K. Guha, C.C.C. Lee, F. Udrea, W.I. Milne, T. Iwaki, J. Covington, J. W. Gardner, S. Maeng, J. Park
Publikováno v:
2006 5th IEEE Conference on Sensors.
Here we present for the first time, the design, fabrication and characterization of novel high temperature SOI micro-hotplates employing tungsten resistive heaters. Tungsten has a high operating temperature, good mechanical strength, and could be use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e34f01d31cc4746066a7ad217d80a235
https://doi.org/10.1109/icsens.2007.355600
https://doi.org/10.1109/icsens.2007.355600
Akademický článek
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Autor:
null Seung-Beck Lee, A.-S. The, K.B.K. Teo, D.G. Hasko, H. Ahmed, W.I. Milne, G.A.J. Amaratunga
Publikováno v:
4th IEEE International Conference on Vacuum Electronics, 2003.
Fabrication and operation of a carbon nanotube lateral field emission device is reported. Compared to vertical field emitters using carbon nanotube cathodes, it has less alignment problems since the anode is fabricated at the same time as the cathode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d9e633e03ec73eec56e482bbfc867c7
https://doi.org/10.1109/ivec.2003.1286062
https://doi.org/10.1109/ivec.2003.1286062
Publikováno v:
ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings.
Hydrogenated amorphous silicon carbide films (a-SiC:H) were deposited using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique from a mixture of methane, silane and hydrogen, with diborane as the doping gas. The effect of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1128c44154a93726add72a53ff2a75c
https://doi.org/10.1109/smelec.1996.616482
https://doi.org/10.1109/smelec.1996.616482
Publikováno v:
ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings.
The deposition of hydrogenated amorphous silicon carbide (a-SiC:H) films from a mixture of silane, acetylene and hydrogen gas using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) process is reported. The variation of the deposi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e41ed3dd32d7493104bfdff99b1aeec
https://doi.org/10.1109/smelec.1996.616491
https://doi.org/10.1109/smelec.1996.616491