Zobrazeno 1 - 10
of 67
pro vyhledávání: '"W.G. Breiland"'
Autor:
C. S. Alexander, Justin Brown, Tom F. Thornhill, L.C. Chhabildas, W.D. Reinhart, W.G. Breiland
Publikováno v:
International Journal of Impact Engineering. 35:1827-1835
Impact flash is a brief, intense flash of light released when a target is impacted by a hypervelocity particle. It is caused by emissions from a jet of shocked material which is thrown from the impact site. Impact flash phenomenology has been known f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bee302fa37e764d06473c76c4fb4e66f
https://doi.org/10.1016/j.ijimpeng.2008.07.058
https://doi.org/10.1016/j.ijimpeng.2008.07.058
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
MRS Bulletin. 27:520-524
Distributed Bragg reflectors (DBRs) not only serve as high-reflectance mirrors to define the laser cavity of a vertical-cavity surface-emitting laser (VCSEL), but they also must conduct electricity, confine currents, and provide a single-crystal temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a3fb61e1d28f9e0ed82c80f0dd44f7cb
https://doi.org/10.1557/mrs2002.170
https://doi.org/10.1557/mrs2002.170
Publikováno v:
Materials Science and Engineering: B. 17:163-171
A general fundamental model for low pressure chemical vapor deposition in a multiwafer reactor has been developed and evaluated in terms of its ability to predict polycrystalline silicon growth rate data from a commercial reactor. The model incorpora
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::053e7ef73f38c2691c3f8089ec72adc9
https://doi.org/10.1016/0921-5107(93)90100-2
https://doi.org/10.1016/0921-5107(93)90100-2
Results from spectral radiance measurements using optical multi-channel analyzer over the visible and near infrared regime provide estimates of temperature from expansion products resulting from shocked materials. Specifically, we have made spectral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b095a4d2d800379b260c327912bbe2b9
https://resolver.caltech.edu/CaltechAUTHORS:REIijie08
https://resolver.caltech.edu/CaltechAUTHORS:REIijie08
Autor:
W.G. Breiland
Publikováno v:
2000 Digest of the LEOS Summer Topical Meetings. Electronic-Enhanced Optics. Optical Sensing in Semiconductor Manufacturing. Electro-Optics in Space. Broadband Optical Networks (Cat. No.00TH8497).
Epitaxial growth of compound semiconductors is accomplished with MOCVD or MBE. In both these methods, many process variables must be precisely controlled to achieve the proper combination of layer thickness, chemical composition, lattice matching, an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12c466b3261e763a20b64ae54511852d
https://doi.org/10.1109/leosst.2000.869714
https://doi.org/10.1109/leosst.2000.869714
This report summarizes the development of in situ optical photoreflectance as a tool for measuring impurity concentrations in compound semiconductors. The authors have successfully explored the use of photoreflectance as an in situ tool for measuring
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38e0cf0192752c45f97a8893855b9f00
https://doi.org/10.2172/564267
https://doi.org/10.2172/564267
This report summarizes the development of in situ spectral reflectance as a tool for improving the quality, reproducibility, and yield of device structures grown from compound semiconductors. Although initially targeted at MBE (Molecular Beam Epitaxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ad9ced51505e632397ea566b82ce4e7
https://doi.org/10.2172/481572
https://doi.org/10.2172/481572