Zobrazeno 1 - 10
of 146
pro vyhledávání: '"W.G Yao"'
Autor:
Man, Maoli1 (AUTHOR) manmaoli@163.com, Zhao, Mingming2 (AUTHOR) 3014207421@tju.edu.cn, Lyu, Yunfei1 (AUTHOR) lvyunfei4321@163.com
Publikováno v:
Materials (1996-1944). Nov2024, Vol. 17 Issue 22, p5417. 12p.
Autor:
Song, Yunbo1 (AUTHOR) songyunbo-scau@stu.scau.edu.cn, Chen, Meng1 (AUTHOR) 19877989670@163.com, Wu, Jiarui1 (AUTHOR) wujiarui@stu.scau.edu.cn, Hong, Jingxin1 (AUTHOR) hongjingxin@stu.scau.edu.cn, Ouyang, Ting1 (AUTHOR) oyting@stu.scau.edu.cn, Liang, Yuling1 (AUTHOR) liangyuling@stu.scau.edu.cn, Liang, Mingrong1,2 (AUTHOR) liangmr0321@connect.hku.hk, Lu, Yongyue1 (AUTHOR) liangmr0321@connect.hku.hk
Publikováno v:
Insects (2075-4450). Nov2024, Vol. 15 Issue 11, p876. 19p.
Publikováno v:
Materials Science and Engineering: B. 100:152-155
Ge nanocrystal (nc-Ge) embedded Si oxide films were deposited on p-type Si substrates using the RF magnetron sputtering technique with a Ge–SiO 2 composite target. Films were annealed in a nitrogen ambient for 30 min at 300–1000 °C with an inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12915e5c0c7d9c2842f49744bdada90f
https://doi.org/10.1016/s0921-5107(03)00090-4
https://doi.org/10.1016/s0921-5107(03)00090-4
Publikováno v:
Journal of Magnetism and Magnetic Materials. 257:95-99
The solid state synthesis reactions between elemental α-Fe powder and m -phenylene diamine (C 6 H 4 (NH 2 ) 2 ) have been studied. The different phase transformations are found in the course of milling and during subsequent thermal annealing. The si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb541e336e47bef1833200190750328a
https://doi.org/10.1016/s0304-8853(02)01054-5
https://doi.org/10.1016/s0304-8853(02)01054-5
Publikováno v:
Surface and Coatings Technology. 161:92-95
SiO 2 thin films embedded with Ge nanocrystallines (nc-Ge) were prepared on p-type Si and optical quartz glasses substrates by RF-magnetron co-sputtering method from a composite target of Ge and SiO 2 . The as-deposited films were annealed in the tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::267a4f20320d9d450aae0f08e0fb3192
https://doi.org/10.1016/s0257-8972(02)00343-2
https://doi.org/10.1016/s0257-8972(02)00343-2
Publikováno v:
Surface and Coatings Technology. 154:82-87
Electroluminescence (EL) devices have been fabricated on three types of silicon based oxide films (Ge–SiO 2 films, Si–SiO 2 films, and Al–SiO 2 films). Visible EL from the devices can be seen with the naked eye when the bias voltage greater tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ae6f7264839114568afbddb1adead08
https://doi.org/10.1016/s0257-8972(01)01704-2
https://doi.org/10.1016/s0257-8972(01)01704-2
Publikováno v:
Chinese Science Bulletin. 46:1268-1271
Ge-SiO2 thin films were deposited on p-type Si substrates using the radio frequency (rf) magnetron sputtering technique with a Ge-SiO2 composite target. Films were annealed in N2 ambience for 30 min at 300°C–1000°C with an interval of 100°C. Thr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a83a634491faf44fda5d95bc8207f222
https://doi.org/10.1007/bf03184322
https://doi.org/10.1007/bf03184322
Publikováno v:
Chinese Science Bulletin. 44:210-214
InAs-SiO2 nanocrystal-embedded films were prepared by using radio-frequency cosputtering. The growth behavior of InAs in the composite film has been studied by a transmission electron microscope. It has been found that with the increasing substrate t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c91984f06c4fb3561151030263782d2
https://doi.org/10.1007/bf02896275
https://doi.org/10.1007/bf02896275
Publikováno v:
Chemical Engineering Science. 53:3031-3040
Two unsteady stirring approaches, co-reverse periodic rotation and time-periodic fluctuation of rotational speed, are adopted to enhance global mixing in a stirred tank with high viscosity materials. The relations of complete decolorization time with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::508f45596bd50a4f6dcb84c5f00167c1
https://doi.org/10.1016/s0009-2509(98)00116-x
https://doi.org/10.1016/s0009-2509(98)00116-x
Publikováno v:
Journal of Crystal Growth. 186:480-486
In situ radio-frequency (RF) magnetron cosputtering was used to prepare InAs nanocrystals embedded in SiO 2 matrices. The growth behavior of InAs in the composite films has been studied systematically for the first time by transmission electron micro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2be1f5af7d47a48d335a2415083b61bb
https://doi.org/10.1016/s0022-0248(97)00820-8
https://doi.org/10.1016/s0022-0248(97)00820-8