Zobrazeno 1 - 10
of 265
pro vyhledávání: '"W.C. Hsu"'
94
Undoped α-Si films and Poly-Si films have been employed to fabricate α-Si thin film transistors (α-Si TFTs) and poly-silicon thin film transistors (poly-Si TFTs) on glass and Si wafer, respectively. This study aims to investigate the effec
Undoped α-Si films and Poly-Si films have been employed to fabricate α-Si thin film transistors (α-Si TFTs) and poly-silicon thin film transistors (poly-Si TFTs) on glass and Si wafer, respectively. This study aims to investigate the effec
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/72276524929696062146
Autor:
J.H. Jhan, H.L. Ke, W.C. Hsu, P.I. Liang, Y.C. Lee, H.H. Lin, T.Y. Tang, Y.R. Wu, A.M. Huang, H.Y. Lee, H.C. Yeh, W.J. Wu, C.C. Li, W.M. Li
Publikováno v:
European Urology Open Science. 44:S229
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7449338fd5b89892ee41056f2d6e3ad
https://doi.org/10.1016/s2666-1683(22)01989-9
https://doi.org/10.1016/s2666-1683(22)01989-9
Autor:
C.S. Wang, W.C. Hsu, J.H. Jhan, C.W. Chang, Y.R. Wu, Y.C. Lee, W.M. Li, L.L. Chang, A.M. Huang, H.H. Lin, W.J. Wu, C.C. Li, H.L. Ke
Publikováno v:
European Urology Open Science. 44:S230
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e7264ce9f7caf9ead7bc9bf41278852
https://doi.org/10.1016/s2666-1683(22)01990-5
https://doi.org/10.1016/s2666-1683(22)01990-5
Akademický článek
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Publikováno v:
Coatings
Volume 10
Issue 6
Coatings, Vol 10, Iss 570, p 570 (2020)
Volume 10
Issue 6
Coatings, Vol 10, Iss 570, p 570 (2020)
In this study, AlGaN/GaN high electron mobility transistors (HEMTs) with AlGaN back barriers (B.B.) were comprehensively investigated based on the different Al mole fractions and thicknesses in the design of the experiments. It was shown that the off
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::397b2753e449e4d9d99405ecdeb3bdb4
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Publikováno v:
Journal of Crystal Growth. 468:17-23
The emergence of the high-performance multi-crystalline silicon (HP mc-Si) in 2011 has made a significant impact to photovoltaic industry. In addition to the much better ingot uniformity and production yield, HP mc-Si also has better material quality
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a535e7520e8065c53a8fde206734ba8
https://doi.org/10.1016/j.jcrysgro.2016.10.072
https://doi.org/10.1016/j.jcrysgro.2016.10.072
Publikováno v:
Journal of Crystal Growth. 547:125810
The noncontact crucible (NOC) method has a large and deep low-temperature region in the upper central part of a Si melt to grow a uniform large Si single ingot without contact with the crucible wall. The temperature distribution in the NOC ingot is q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56cae1579472e16d7f6cc90a7008d85f
https://doi.org/10.1016/j.jcrysgro.2020.125810
https://doi.org/10.1016/j.jcrysgro.2020.125810
Autor:
Y.D. Jin, H.Q. Luc, W.J. Lin, S.K. Yang, Y.K. Zhang, B.H. Do, H.S. Huynh, H.M.T. Ha, P. Huang, W.C. Hsu, C.Y. Lin, E.Y. Chang
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02224cc13ada80ed23577586359ecb49
https://doi.org/10.7567/ssdm.2018.ps-4-12
https://doi.org/10.7567/ssdm.2018.ps-4-12
Publikováno v:
Solid State Phenomena. 242:21-29
In recent years, silicon solar cells continue to remain the main stream in photovoltaic (PV) industry, particularly of made from multi-crystalline silicon (mc-Si). The progress of crystal growth technology for mc-Si ingot using directional solidifica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::042038272a00267c5ad0a18dd027ff38
https://doi.org/10.4028/www.scientific.net/ssp.242.21
https://doi.org/10.4028/www.scientific.net/ssp.242.21