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Autor:
W.B. van Noort, R.J. Havens, Roel Daamen, C. Detcheverry, L. F. Tiemeijer, Greja Johanna Adriana Maria Verheijden, Pascal Bancken
Publikováno v:
IEEE MTT-S International Microwave Symposium Digest, 2005..
A 2 times 2 /spl mu/m, dual damascene, dual metal Cu in SiLK/spl trade/ process on 200 mm high-resistivity silicon wafers is presented. The lines and spaces in both metal layers can be patterned to submicron dimensions. The extremely low specific con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3fc3526211de3fe2834ede5d5935376
https://doi.org/10.1109/mwsym.2005.1517081
https://doi.org/10.1109/mwsym.2005.1517081
