Zobrazeno 1 - 10
of 218
pro vyhledávání: '"W.B. de Boer"'
Audit on the performance of MMR protein IHC staining on biopsies and resections of colorectal cancer
Autor:
W.B. de Boer, L. Kang
Publikováno v:
Pathology. 52:S77
Publikováno v:
Internal Medicine Journal. 45:48-54
Background and Aims Rates of long-term clinical outcomes of chronic hepatitis C in patients with none, mild or severe liver fibrosis are required to determine benefits of anti-viral therapies. This study evaluated long-term outcomes for chronic hepat
Autor:
Lis K. Nanver, Negin Golshani, W.B. de Boer, Jaber Derakhshandeh, K. R. C. Mok, Vahid Mohammadi
Publikováno v:
Microelectronic Engineering. 125:45-50
Temperature dependency of the kinetics of PureB CVD deposition over patterned Si/SiO 2 surfaces has been investigated. It has been shown that there is a large difference between layers deposited at either 400 °C or 700 °C. The latter are very smoot
Publikováno v:
ECS Transactions, 45 (6), 2012
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2, 39-48
ISSUE=6;STARTPAGE=39;ENDPAGE=48;TITLE=Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2
Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2, 39-48
ISSUE=6;STARTPAGE=39;ENDPAGE=48;TITLE=Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2
The pattern dependency of pure-boron (PureB) layer chemical-vapor depositions (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is sho
Autor:
T.L.M. Scholtes, G. van Veen, K. Kooijman, A. Sakic, Jaber Derakhshandeh, Lis K. Nanver, S. Milosavljevic, W.H.A. Wien, P. Vogelsang, W.B. de Boer
Publikováno v:
IEEE Transactions on Electron Devices. 59:2707-2714
A silicon photodiode detector is presented for use in scanning electron microscopy (SEM). Enhanced imaging capabilities are achieved for sub-keV electron energy values by employing a pure boron (PureB) layer photodiode technology to deposit nanometer
Publikováno v:
ECS Journal of Solid State Science and Technology, 1 (1), 2012
The pattern dependency of pure-boron (PureB) layer chemical-vapor Deposition (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is show
Autor:
W.B. de Boer
Publikováno v:
Meeting Abstracts-Electrochemical Society, 214th ECS Meeting, Honolulu, HI, 12-17 October 2008: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 3
ECS Transactions, 16 (10), 2008
ECS Transactions, 16 (10), 2008
Fifty years of Si and SiGe epitaxy in the semiconductor industry and twenty-five since the conception of the present generation of industrial epi reactors suffice to justify a review of the evolution and the status of the technology. Although there h
Autor:
B Augustson, G.C. Macquillan, Cathy Mews, A Mitchell, D Baker, L Delriviere, G P Jeffrey, W.B. De Boer, G Garas, K. So, David J. Speers
Publikováno v:
Internal Medicine Journal. 37:192-195
An 11-year-old boy presented with hepatic failure secondary to parvovirus B19 infection, requiring urgent liver transplantation. His recovery was complicated by primary Epstein-Barr virus and cytomegalovirus infections. He subsequently developed apla
Publikováno v:
ECS Transactions, 64 (6), 2014
The selective epitaxial growth of Ge-on-Si followed by in-situ deposition of a nm-thin Ga/B layer stack (PureGaB) has previously been shown to be a robust CMOS-compatible process for fabrication of Ge-on-Si photodiodes. In this paper, strategies to i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::567b8b96aac4480322968eee4bb3bce3
http://resolver.tudelft.nl/uuid:db7f8124-5f80-4b09-a282-64064b468f20
http://resolver.tudelft.nl/uuid:db7f8124-5f80-4b09-a282-64064b468f20
Autor:
Tamim P. Sidiki, C. M. Sotomayor Torres, W.B. de Boer, M Albrecht, Silke Christiansen, C Ferrari
Publikováno v:
Materials Science in Semiconductor Processing. 3:389-393
The effect of interfacial potential fluctuations of a Si/SiGe multiple quantum well structure upon the low-temperature exciton luminescence is reported. Exciton localisation at such potential fluctuations with a lateral period of 4–6 nm is observed