Zobrazeno 1 - 10
of 442
pro vyhledávání: '"W.A. Bonner"'
Publikováno v:
Journal of Crystal Growth. 174:250-255
Bulk Ga 1 − x In x As single crystals with In composition ranging from x = 0.02 to 0.1 have been grown by the LEC method from melt compositions of 26.3 to 55 mol% In. Due to segregation effects, the In content in the melt increases during growth. C
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85c1343a0350c4df5693a4e0411be671
https://doi.org/10.1016/s0022-0248(96)01113-x
https://doi.org/10.1016/s0022-0248(96)01113-x
Publikováno v:
Physical Review B. 45:6614-6622
Microstructures of lattice-matched ${\mathrm{In}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}$${\mathrm{As}}_{\mathit{y}}$${\mathrm{P}}_{1\mathrm{\ensuremath{-}}\mathit{y}}$ epitaxial layers, grown on (001), (110), (111${)}_{\mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7445016d57a9382bb7ed0310f4f894df
https://doi.org/10.1103/physrevb.45.6614
https://doi.org/10.1103/physrevb.45.6614
Publikováno v:
Journal of Crystal Growth. 114:481-485
InP and GaInAs were deposited on InP, by low pressure organometallic vapor phase epitaxy, in stripes opened in a layer of polycrystalline InP. Using polycrystalline InP as a mask eliminates growth spikes at the edge of the mask, and there is little (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::120ba660c7281d35102c955f3c543090
https://doi.org/10.1016/0022-0248(91)90062-a
https://doi.org/10.1016/0022-0248(91)90062-a
Autor:
S. A. Schwarz, W.A. Bonner, C.E. Zah, F.G. Favire, Rajaram Bhat, S.G. Menocal, M.A. Koza, D. M. Hwang, C. Caneau
Publikováno v:
Journal of Crystal Growth. 107:772-778
The orientation dependence of doping in organometallic chemical vapor deposition (OMCVD) is shown to be far more complex than previously believed, with the variation of doping with increasing misorientation from (100) towards the (111)A/B being non-m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b11ba70122708edbdb1bf8246f59650
https://doi.org/10.1016/0022-0248(91)90556-k
https://doi.org/10.1016/0022-0248(91)90556-k
Publikováno v:
IEEE Photonics Technology Letters. 9:1319-1321
Broad-area (W=150 /spl mu/m) single-quantum-well (SQW) lasers have been successfully fabricated on n-type In/sub 0.03/Ga/sub 0.97/As substrates without incorporating aluminum-containing alloys. The strained-layer InGaP-GaAs-InGaAs heterostructure was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a32dce1b74257da3301849318c11861a
https://doi.org/10.1109/68.623249
https://doi.org/10.1109/68.623249
Publikováno v:
Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society.
In this talk, we present the design and device results of strained-layer InGaAs-GaAs-InGaP separate confinement heterostructure lasers emitting at 1.14 /spl mu/m fabricated on a ternary In/sub 0.03/Ga/sub 0.97/As substrate. The InGaAs substrate used
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64102095fb84908e6b8048079191023c
https://doi.org/10.1109/leos.1996.571584
https://doi.org/10.1109/leos.1996.571584
Autor:
W.A. Bonner
Publikováno v:
Conference Proceedings. 1997 International Conference on Indium Phosphide and Related Materials.
In(P,As) bulk ternary single crystal growth has been demonstrated using the liquid encapsulated Czochralski (LEC) technique with both InP and ternary In(P,As) seeds. Arsenic concentrations to nominally 10% have been achieved. While problems related t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1fdfa06a05a2c54ccd0a117931c583b
https://doi.org/10.1109/iciprm.1997.600094
https://doi.org/10.1109/iciprm.1997.600094
Publikováno v:
MRS Proceedings. 198
The orientation dependence of phase separation has been examined in detail in InGaAsP layers grown by liquid phase epitaxy on (001), (110), (111)In and (123) InP substrates. It is shown that phase separation is two-dimensional in nature and does not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::908b56eac42997edfba7f1425882dcbd
https://doi.org/10.1557/proc-198-609
https://doi.org/10.1557/proc-198-609
Autor:
M.A. Shahid, T.L. Mcdevitt, W.A. Bonner, F.S. Turco, V. G. Keramidas, M.C. Tamargo, David E. Laughlin, Subhash Mahajan
Microstructural characteristics of phase separated and ordered epitaxial layers of III-V compound semiconductors have been investigated by transmission electron microscopy. Phase separation is a common feature of InGaAs and InGaAsP layers grown by LP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0192a0dbc531f8383d9bf7cfe825551f
https://doi.org/10.1016/b978-0-444-88429-9.50022-7
https://doi.org/10.1016/b978-0-444-88429-9.50022-7
