Zobrazeno 1 - 10
of 40
pro vyhledávání: '"W. van Roosbroeck"'
Publikováno v:
Physical Review Letters. 38:134-137
A set of harmonic-oscillator-like standing spin-wave modes have been observed in superfluid $^{3}\mathrm{He}$-$B$ confined by a set of parallel plates. The frequencies and intensities of the modes are in close agreement with computer solutions of the
Publikováno v:
Journal of Low Temperature Physics. 34:607-616
We have studied the orienting effect that an electric field has on the orbital motion of the pairs in superfluid 3He-B, using the orientation-dependent transverse NMR frequency shift as a probe. This method provides high resolution for studying the o
Autor:
W. van Roosbroeck
Publikováno v:
Journal of Non-Crystalline Solids. 12:232-262
A new approach to understanding amorphous semiconductors is provided by a model whose novel concepts are necessary consequences of transport and recombination fundamentals. The amorphous semiconductors are examples of the ‘relaxation semiconductor
Autor:
W. van Roosbroeck
Publikováno v:
Physical Review Letters. 28:1120-1123
Autor:
W. van Roosbroeck
Publikováno v:
Physical Review. 91:282-289
Taking into account the thermal equilibrium minority carrier concentration and employing the formulation which includes, as one of two fundamental differential equations, the continuity equation for added carrier concentration $\ensuremath{\Delta}p$,
Autor:
W. van Roosbroeck
Publikováno v:
Physical Review. 139:A1702-A1716
Autor:
W. van Roosbroeck
Publikováno v:
Physical Review. 101:1713-1725
Autor:
W. Van Roosbroeck
Publikováno v:
Bell System Technical Journal. 29:560-607
A theoretical analysis of the flow of added current carriers in homogeneous semiconductors is given. The simplifying assumption is made at the outset that trapping effects may be neglected, and the subsequent treatment is intended particularly for ap
Autor:
W. Van Roosbroeck
Publikováno v:
Journal of Applied Physics. 26:380-391
With both surface and volume recombination taken into account, time‐dependent and steady‐state Green's functions are obtained for a point source of added carriers in a semi‐infinite semiconductor, and for infinite line and plane sources paralle
Autor:
W. van Roosbroeck
Publikováno v:
Physical Review. 123:474-490