Zobrazeno 1 - 10
of 72
pro vyhledávání: '"W. Wohlmuth"'
Publikováno v:
IEEE Transactions on Electron Devices. 45:62-67
As the dimensions of state-of-the art metal-semiconductor-metal photodetectors (MSMPD's) decrease, effects that are insignificant for relatively large geometries become significant in the optoelectronic performance of submicron MSMPD's. Accurate mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0524930e88bf8afc2dc7bb7b6d7f8c23
https://doi.org/10.1109/16.658812
https://doi.org/10.1109/16.658812
Publikováno v:
Journal of Lightwave Technology. 15:1871-1879
A detailed study of the performance of monolithically integrated photoreceivers based on metal-semiconductor-metal (MSM) photodetectors (PD's) and HEMT's is undertaken. Two different stacked-layer approaches to integrating MSM-PD's with HEMT's are in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae4dfa60c721a8567a7d601851b05da8
https://doi.org/10.1109/50.633577
https://doi.org/10.1109/50.633577
Publikováno v:
2013 IEEE MTT-S International Microwave Symposium Digest (MTT).
This paper combines the advantages of accurate measurement based non-linear behavioral look-up table transistor models with passive embedding networks to develop a scalable large signal model. This approach provides for a more robust utilization of m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2e9071ce5f2f78baf90ca0a3ee73ec6
https://doi.org/10.1109/mwsym.2013.6697424
https://doi.org/10.1109/mwsym.2013.6697424
Publikováno v:
Journal of Lightwave Technology. 14:716-723
An accurate model for In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal (MSM) photodetectors is presented for circuit-level simulation. Dark and dc current characteristics are investigated and modeled. To accurately simulate the large-signal respo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f336a5d3b76d4f67dcf988d699b2083
https://doi.org/10.1109/50.495150
https://doi.org/10.1109/50.495150
Publikováno v:
IEEE Photonics Technology Letters. 6:966-970
The effects of size and transparency of fingers on the spatial distribution of radiative recombination of photoinjected carriers in metal-semiconductor-metal photodiodes have been investigated using photoluminescence microscopy. Investigations of det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d826a721fd3a89f27fcbe3791b853467
https://doi.org/10.1109/68.313066
https://doi.org/10.1109/68.313066
Autor:
A. Mahajan, Patrick Fay, Sethumadhavan Chandrasekhar, W. Wohlmuth, C. Caneau, Ilesanmi Adesida
Publikováno v:
IEEE Photonics Technology Letters. 10:713-715
A high-speed monolithically integrated photoreceiver using a pin photodiode and low-noise high-electron mobility transistor (HEMT)-based electrical amplifier is reported. The photoreceiver uses a three-stage transimpedance amplifier with a bandwidth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fa7fb2c50a83640447a34d38f6b521a
https://doi.org/10.1109/68.669343
https://doi.org/10.1109/68.669343
Publikováno v:
IEEE Photonics Technology Letters. 9:991-993
The digital and analog performance of high-speed, monolithically integrated, low-noise metal-semiconductor-metal MSM-HEMT photoreceivers is reported. The MSM photodetectors were vertically integrated with the HEMT's using a stacked layer structure, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::162c3925fc780bbadb0ed1358569f056
https://doi.org/10.1109/68.593376
https://doi.org/10.1109/68.593376
Publikováno v:
Applied Physics Letters. 70:3026-3028
A metal-semiconductor-metal photodetector (MSMPD) with a hybrid combination of transparent cadmium-tin-oxide and opaque Ti:Au electrodes is proposed and demonstrated. A significant decrease in dark current is obtained by independently engineering the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6b46ba56147b4ff30d4b4b456dd73fb
https://doi.org/10.1063/1.118738
https://doi.org/10.1063/1.118738
Publikováno v:
IEEE Photonics Technology Letters. 9:654-656
The responsivity and the bandwidth of metal-semiconductor-metal photodetectors (MSMPD's) with different InGaAs absorption layer thicknesses and electrode geometries were investigated. By decreasing the InGaAs thickness from 1.0 to 0.25 /spl mu/m, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22f8f999d316125e29a54759ffe7d814
https://doi.org/10.1109/68.588184
https://doi.org/10.1109/68.588184
Publikováno v:
IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e125b54dfb425ada5860704873caf23b
https://doi.org/10.1109/leosst.1995.764158
https://doi.org/10.1109/leosst.1995.764158