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Publikováno v:
Solid State Communications. 88:943-946
From absorption, emission, luminescence excitation and electron spin orientation studies of undoped GaAs-AlxGa1−xAs superlattices we demonstrate the intrinsic nature of the radiative recombination process. This is in direct contrast to recombinatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04791d59a58d6976cbdd813160163a5b
https://doi.org/10.1016/0038-1098(93)90274-q
https://doi.org/10.1016/0038-1098(93)90274-q
Autor:
L. Soto, W. Wiegmann, Paul Joseph Lemaire, B. Wilkens, A. C. Gossard, Hyatt M. Gibbs, J. L. Jewell, S. S. Tarng, T. Venkatesan
Publikováno v:
Optics letters. 9(7)
We demonstrate the potential for all-optical processing of data transmitted over single-mode fibers using a bistable optical device (BOD). A stream of clock/bias pulses transmitted over a 1-km-long single-mode fiber (SMF) is processed by a pseudorand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8eabd06897f2eedfd5002e283360dbc
https://pubmed.ncbi.nlm.nih.gov/19721576
https://pubmed.ncbi.nlm.nih.gov/19721576
Autor:
Yaron Silberberg, D. J. Eilenberger, Arthur C. Gossard, P. W. Smith, W. Wiegmann, David A. B. Miller
Publikováno v:
Optics letters. 9(11)
By using a GaAs/GaAIAs multiple-quantum-well sample as a saturable absorber in an external resonator, we have passively mode locked a GaAs laser to obtain pulses as short as 1.6 psec, the shortest pulses ever observed to our knowledge from a mode-loc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a4748adea1e47211c0c5e702f7f6644c
https://pubmed.ncbi.nlm.nih.gov/19721649
https://pubmed.ncbi.nlm.nih.gov/19721649
Publikováno v:
Optics letters. 9(5)
It is shown theoretically that optical bistability will exist in a material whose optical absorption is more than linearly proportional to the degree to which the material is excited. No cavity or external feedback is required. The underlying princip
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6c2e77c0e58898ae0f26fab8cc9a182
https://pubmed.ncbi.nlm.nih.gov/19721530
https://pubmed.ncbi.nlm.nih.gov/19721530
Publikováno v:
1965 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e35dd19f5a7d98ef181a012747124874
https://doi.org/10.1109/isscc.1965.1157592
https://doi.org/10.1109/isscc.1965.1157592
Autor:
H. M. Gibbs, W. Wiegmann, M. C. Rushford, Arthur C. Gossard, N. Peyghambarian, M. Warren, J. L. Jewell
Publikováno v:
Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences. 313:375-380
A simple technique for performing all-optical logic (NOR etc.) on a single etalon is described. Computer simulation and experiments with dye-filled and GaAs etalons verify its validity.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5159462b8e135ac79421b54c229cbcda
https://doi.org/10.1098/rsta.1984.0122
https://doi.org/10.1098/rsta.1984.0122
Publikováno v:
Journal of Applied Physics. 51:357-363
A detailed study has been made of interdiffusion in (GaAs)n(AlAs)m multilayer structures grown by molecular beam epitaxy. The subscripts n and m indicate that the structure is a repeating sequence of n monolayers of GaAs followed by m monolayers of A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::141a46a7bdbce4a7b9deb013f7410cd0
https://doi.org/10.1063/1.327310
https://doi.org/10.1063/1.327310
Publikováno v:
Applied Physics Letters. 36:373-376
A new unipolar rectifying semiconductor structure is demonstrated. Rectification is produced by an asymmetric potential barrier created by an MBE‐grown sawtooth‐shaped composition wave of AlxGa1−xAs between layers of n‐type GaAs. Single and m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a82aef7cd6dfd6e7490f73136e39f94
https://doi.org/10.1063/1.91492
https://doi.org/10.1063/1.91492
Publikováno v:
Journal of Crystal Growth. 46:172-178
Superlattices of alternate ultra-thin layers of Ge and Ga1−xAlxAs have been deposited epitaxially on GaAs substrates by molecular beam epitaxy. The structural perfection, interface roughness and crystal growth processes for these superlattices have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::171e52fe2603405c369c9f5574640037
https://doi.org/10.1016/0022-0248(79)90053-8
https://doi.org/10.1016/0022-0248(79)90053-8