Zobrazeno 1 - 10
of 34
pro vyhledávání: '"W. V. McLevige"'
Autor:
Ryan Cottier, Aristo Yulius, James W. Beletic, W. V. McLevige, F. Erdem Arkun, Mark Farris, Eric C. Holland, Majid Zandian, Michael Carmody, Dennis Edwall
Publikováno v:
Image Sensing Technologies: Materials, Devices, Systems, and Applications V.
HgCdTe films are grown by molecular beam epitaxy (MBE) on large area CdZnTe substrates to achieve low dark current, high quantum efficiency infrared image sensors with 1.7um and 2.5um cut-off respectively. We present the structural and optical charac
Autor:
Erdem Arkun, Stephen A. Smee, James E. Gunn, James W. Beletic, Dennis Edwall, Klaus W. Hodapp, Micheal Carmody, Majid Zandian, Mark Farris, Naoyuki Tamura, Eric C. Holland, Donald N. B. Hall, W. V. McLevige, Atsushi Shimono, John Auyeung
Publikováno v:
SPIE Proceedings.
We present the test results of science grade substrate-removed 4K×4K HgCdTe H4RG-15 NIR 1.7 μm and SWIR 2.5 μm sensor chip assemblies (SCAs). Teledyne’s 4K×4K, 15 μm pixel pitch infrared array, which was developed for the era of Extremely Larg
Publikováno v:
SPIE Proceedings.
We describe progress in the development and demonstration of Teledyne’s new high resolution large format FPA for astronomy, the H4RG-10 IR. The H4RG-10 is the latest in Teledyne’s H×RG line of sensors, in a 4096×4096 format using 10 micron pixe
Autor:
M. L. Thomas, G. Hildebrand, M. Muzilla, John H. Dinan, V. Gil, Lester J. Kozlowski, Andrew J. Stoltz, William E. Tennant, P. Ely, D. D. Edwall, M. Zandian, K. Spariosu, W. V. McLevige
Publikováno v:
Journal of Electronic Materials. 30:590-594
In the last few years Rockwell has developed a novel simultaneous unipolar multispectral integrated HgCdTe detector and focal plane array technology that is a natural and relatively straightforward derivative of our baseline double layer planar heter
Autor:
G. Hildebrandt, R. E. DeWames, Priyalal S. Wijewarnasuriya, L. C. Dawson, D. D. Edwall, W. V. McLevige, Jose M. Arias, A. I. D'Souza, C. Staller
Publikováno v:
Journal of Electronic Materials. 29:630-635
Very long wavelength infrared (VLWIR; 15 to 17 µm) detectors are required for remote sensing sounding applications. Infrared sounders provide temperature, pressure and moisture profiles of the atmosphere used in weather prediction models that track
Autor:
D. B. Young, D. D. Edwall, A. I. D'Souza, M. Zandian, Daeyeon Lee, J. Waldrop, Priyalal S. Wijewarnasuriya, Jose M. Arias, W. V. McLevige
Publikováno v:
Journal of Electronic Materials. 28:649-653
Long wavelength infrared molecular beam epitaxy (MBE) grown p-on-n Hg1−xCdxTe double layer planar heterostructure (DLPH) detectors have been characterized to determine the dominant mechanisms limiting their performance. Material defects have been i
Autor:
G. Hildebrandt, M. Zandian, J. G. Pasko, Jose M. Arias, S. Sivananthan, D. D. Edwall, Priyalal S. Wijewarnasuriya, C. A. Chen, W. V. McLevige, Saroj Rujirawat, A. C. Chen, A. I. D'Souza
Publikováno v:
Journal of Electronic Materials. 27:546-549
The capability of growing state-of-the-art middle wavelength infrared (MWIR)-HgCdTe layers by molecular beam epitaxy (MBE) on large area silicon substrates has been demonstrated. We have obtained excellent compositional uniformity with standard devia
Publikováno v:
Journal of Electronic Materials. 27:698-702
Results are presented for minority carrier lifetime in n-type molecular beam epitaxy Hg1−xCdxTe with x ranging from 0.2 to 0.6. It was found that the lifetime was unintentionally degraded by post-growth annealing under Hg saturated conditions in a
Autor:
E. J. Anderson, A. I. D'Souza, M. Zandian, A. D. Markum, D. D. Edwall, L. O. Bubulac, J. W. Derr, J. E. Jandik, L. C. Dawson, W. V. McLevige, J. G. Pasko, William E. Tennant
Publikováno v:
Journal of Electronic Materials. 26:656-661
The molecular beam epitaxy (MBE) growth technology is inherently flexible in its ability to change the Hg1−xCdxTe material’s bandgap within a growth run and from growth run to growth run. This bandgap engineering flexibility permits tailoring the
Autor:
Natalie S. Gluck, J. G. Pasko, A. I. D'Souza, N. Nayar, Donald E. Cooper, R. E. DeWames, Jose M. Arias, M. Zandian, W. V. McLevige, Lester J. Kozlowski, L. O. Bubulac, Randolph L. Hall, D. D. Edwall, M. E. Motamedi, William E. Tennant, Jagmohan Bajaj, Robert Melendes
Publikováno v:
Journal of Electronic Materials. 26:649-655
Short wave infrared (SWIR) devices have been fabricated using Rockwell’s double layer planar heterostructure (DLPH) architecture with arsenic-ion implanted junctions. Molecular beam epitaxially grown HgCdTe/CdZnTe multilayer structures allowed the