Zobrazeno 1 - 10
of 595
pro vyhledávání: '"W. Ulrici"'
Autor:
Peter Rudolph, F.M. Kiessling, W. Ulrici, Martin Albrecht, Klaus Irmscher, Roberto Fornari, M. Roßberg
Publikováno v:
physica status solidi c. 6:2778-2784
GaAs crystals have been grown without B2O3 encapsulation by the vapour-pressure controlled Czochralski (VCz) method to reduce undesired boron incorporation and to enable in situ control of the Ga/As ratio in the melt. With increasing Ga content of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18ba606ae382077d0dc091b18224d1d4
https://doi.org/10.1002/pssc.200982580
https://doi.org/10.1002/pssc.200982580
Autor:
W. Ulrici, F.M. Kiessling, Peter Rudolph, Klaus Irmscher, Reinhard Krause-Rehberg, Martin Albrecht
Publikováno v:
Journal of Crystal Growth. 310:1418-1423
GaAs crystals have been grown without B2O3 encapsulation by the vapour-pressure-controlled Czochralski (VCz) method to reduce undesired boron incorporation and to enable in situ control of the Ga/As ratio in the melt. Semi-insulating boron-reduced 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7f32591b0603c9af66899964cba18c9
https://doi.org/10.1016/j.jcrysgro.2007.11.040
https://doi.org/10.1016/j.jcrysgro.2007.11.040
Autor:
M. Jurisch, W. Ulrici
Publikováno v:
physica status solidi (b). 242:2433-2439
In LEC-grown oxygen-containing GaAs, a vibrational absorption line is observed at 2059.6 cm–1 for T = 7 K after long-time annealing at (700 ± 100) °C. This line is due to the stretching mode of a 12C–16O complex, since the line due to the isoto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a2c7eb81e214649bb7a68855a605479
https://doi.org/10.1002/pssb.200540094
https://doi.org/10.1002/pssb.200540094
Publikováno v:
physica status solidi (b). 242:873-880
In LEC-grown InP, about 30 sharp vibrational absorption lines are measured in the frequency region 2200 to 2350 cm–1. All these lines are due to phosphorus-hydrogen stretching modes. Experiments on InP containing both hydrogen and deuterium finally
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ea0444bb17720709a5ae46b1884ef25
https://doi.org/10.1002/pssb.200402120
https://doi.org/10.1002/pssb.200402120
Autor:
W Ulrici
Publikováno v:
Reports on Progress in Physics. 67:2233-2286
This review summarizes the presently available knowledge concerning hydrogen-impurity complexes in III–V compounds. The impurities form shallow acceptors on group III sites (Be, Zn, Cd) and on group V sites (C, Si, Ge) as well as shallow donors on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f145af8179af4de1f8c0f5ff0b39a57
https://doi.org/10.1088/0034-4885/67/12/r03
https://doi.org/10.1088/0034-4885/67/12/r03
Publikováno v:
Journal of Crystal Growth. 269:218-228
The growth experiments and properties of undoped GaAs crystals grown by the vapour pressure controlled Czochralski (VCz) method without boric oxide encapsulant from Ga-rich melts are presented. Morphological and structural features were investigated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38e93068876a44590dd274ddbb165de8
https://doi.org/10.1016/j.jcrysgro.2004.04.124
https://doi.org/10.1016/j.jcrysgro.2004.04.124
Publikováno v:
physica status solidi (b). 241:1281-1285
The local vibrational mode absorption lines at 3079.2 and 983.3 cm−1, measured in semi-insulating LEC-grown GaAs, are due to the stretching and wagging mode of one hydrogen bonded to a light impurity atom. The investigation of GaAs grown without bo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::386389c376c8c008b92b5eb2070175cc
https://doi.org/10.1002/pssb.200302005
https://doi.org/10.1002/pssb.200302005
Autor:
M. Jurisch, W. Ulrici
Publikováno v:
Physica B: Condensed Matter. :288-292
Two vibrational absorption lines at 3015.5 and 3092.8 cm -1 , observed in liquid encapsulation Czochralski-grown GaAs, are investigated and are assigned to hydrogen stretching modes. The intensities of both lines measured in different samples are str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d869a7ea803339da6c6adbd9716b71b
https://doi.org/10.1016/j.physb.2003.09.089
https://doi.org/10.1016/j.physb.2003.09.089
Publikováno v:
Materials Science in Semiconductor Processing. 6:303-306
Results of the growth of semi-insulating GaAs crystals by the VCz method without B2O3 encapsulant are presented. Crystals have been grown from Ga-rich and near-stoichiometric melts controlled by As partial pressure in the range from 590°C to 630°C.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87f06921c88c0ca3d7aa800e59a56283
https://doi.org/10.1016/j.mssp.2003.07.022
https://doi.org/10.1016/j.mssp.2003.07.022
Publikováno v:
Physica B: Condensed Matter. 336:362-368
The electrical field effect on the optical threshold energy have been studied using electrical deep level optical spectroscopy technique. The measurements were focused on the Cr3+/4+ donor level and on the Cr2+/3+ acceptor level in Cr-doped GaP. It i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0a0ec29cf3a4780558ca3529f009703
https://doi.org/10.1016/s0921-4526(03)00312-0
https://doi.org/10.1016/s0921-4526(03)00312-0