Zobrazeno 1 - 10
of 70
pro vyhledávání: '"W. Taudt"'
Publikováno v:
Journal of Crystal Growth. 197:507-512
ZnSe/GaAs heterostructures grown by metalorganic vapor-phase epitaxy were investigated by high-resolution X-ray diffractometry (HRXRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and scanning transmission electron microscopy (S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::52eb59a8623ea6e51e218a7c1ebae498
https://doi.org/10.1016/s0022-0248(98)00802-1
https://doi.org/10.1016/s0022-0248(98)00802-1
Publikováno v:
physica status solidi (b). 210:367-372
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b292c1e5fb387f9e9e71109a34a6052
https://doi.org/10.1002/(sici)1521-3951(199812)210:2<367::aid-pssb367>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199812)210:2<367::aid-pssb367>3.0.co
Publikováno v:
Journal of Physics D: Applied Physics. 31:2421-2425
Cathodoluminescence (CL) measurements were carried out on ZnSe/GaAs heterostructures grown by metal-organic vapour-phase epitaxy, partly with different pre-growth treatments. The influence of structural defects on the luminescence properties of ZnSe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f1f140b78e9cac7cb33fcde67daa1e5
https://doi.org/10.1088/0022-3727/31/19/010
https://doi.org/10.1088/0022-3727/31/19/010
Autor:
Q. Liu, J. Woitok, A. Hardt, H. Lakner, W. Taudt, J. Xu, H. Hamadeh, H. Körfer, Michael Heuken
Publikováno v:
Journal of Crystal Growth. 191:663-672
The effect of different surface treatments of GaAs substrates on the structural and optical properties of ZnSe were studied for metalorganic vapour-phase epitaxy (MOVPE). Especially, the correlation of the chemical etching process prior to the growth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3b20ef6a251d65ba0217014fc23de93
https://doi.org/10.1016/s0022-0248(98)00364-9
https://doi.org/10.1016/s0022-0248(98)00364-9
Publikováno v:
Journal of Crystal Growth. :435-439
The influence of low-temperature (40 K) e-beam irradiation on the cathodoluminescence (CL) spectrum reconstruction of MOVPE ZnSe : N epilayers was studied. The maximum of the initial wide emission band shifted from 466 to 459 nm and the LO phonon str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f816f2269155925f82e03c25b8df735
https://doi.org/10.1016/s0022-0248(98)80091-2
https://doi.org/10.1016/s0022-0248(98)80091-2
Publikováno v:
Journal of Crystal Growth. :199-202
The results of transient photocapacitance and photocurrent measurements performed on MOVPE-grown Au/ZnSe/GaAs heterostructures are reported for different photon energies and intensities of the monochromatic radiation. Thresholds in both spectra are o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de34107e78525622d536bd9a7879ca9e
https://doi.org/10.1016/s0022-0248(98)80321-7
https://doi.org/10.1016/s0022-0248(98)80321-7
Autor:
Michael Heuken, J. Albert, W. Taudt, A. Bauknecht, M. Saad, T. Kampschulte, Holger Kalisch, J. Söllner, H. Hamadeh, Ulf Blieske, M. Deschler, Holger Jürgensen, M.Ch. Lux-Steiner
Publikováno v:
Journal of Crystal Growth. :158-162
The growth of II–VI semiconductors is performed in MOCVD systems (AIX 200 and AIX 200/4) with a capacity of one 2 in and one 4 in wafer or equivalent, respectively, on 2 in substrates. The growth of ZnSe, ZnSSe and ZnMgSSe has been carried out with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74a11f49459970ab57080e9ecd920d49
https://doi.org/10.1016/s0022-0248(98)80314-x
https://doi.org/10.1016/s0022-0248(98)80314-x
Autor:
W Taudt
Publikováno v:
Journal of Crystal Growth. :435-439
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94324db92f70f2a8d447f6a894d414e2
https://doi.org/10.1016/s0022-0248(97)00812-9
https://doi.org/10.1016/s0022-0248(97)00812-9
Autor:
Holger Kalisch, H. Hamadeh, J. Söllner, W. Taudt, I. P. Marko, Michael Heuken, G. P. Yablonskii, A. L. Gurskii, V. N. Yuvchenko
Publikováno v:
Journal of Crystal Growth. 174:757-762
Optical properties of undoped and nitrogen-doped ZnSe GaAs epilayers grown by MOVPE were investigated by using CW HeCd laser excitation or by pulsed N2-laser radiation in the temperature range between 10 and 300 K and at excitation intensities in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bfadccc33541d88f76b4d2975939024
https://doi.org/10.1016/s0022-0248(97)00027-4
https://doi.org/10.1016/s0022-0248(97)00027-4
Autor:
J. Söllner, Michael Heuken, W. Taudt, H. Hamadeh, G. P. Yablonskii, E.V. Lucenko, I.P. Marko, A. L. Gurskii, Holger Kalisch
Publikováno v:
Journal of Crystal Growth. 174:763-767
Laser action in undoped, nitrogen and chlorine doped ZnSe epitaxial layers has been investigated for pulsed optical excitation with a 1 kHz repetition rate by N2 laser radiation from liquid-nitrogen temperatures up to near room temperature. The highe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2b93f907aa0cccda5b695dd5f510671
https://doi.org/10.1016/s0022-0248(97)00028-6
https://doi.org/10.1016/s0022-0248(97)00028-6