Zobrazeno 1 - 10
of 418
pro vyhledávání: '"W. Swart"'
Autor:
Konstantin Baranov, Ivan Reznik, Sofia Karamysheva, Jacobus W. Swart, Stanislav Moshkalev, Anna Orlova
Publikováno v:
Technologies, Vol 11, Iss 4, p 93 (2023)
Colloidal nanoparticles, and quantum dots in particular, are a new class of materials that can significantly improve the functionality of photonics, electronics, sensor devices, etc. The main challenge addressed in the article is modification of the
Externí odkaz:
https://doaj.org/article/2f75117e4f0b4b58a3c9d3a76ae03704
Publikováno v:
Journal of Human Sciences and Extension, Vol 8, Iss 1, Pp 1-13 (2020)
Extension workplace mentoring programs may produce increased Extension programming competence, organizational commitment, job satisfaction (Denny, 2016), and leadership effectiveness (Kutilek & Earnest, 2001). The study described in this article aime
Externí odkaz:
https://doaj.org/article/40cd9af78a6c4b9a865dfa1aa0414f86
Autor:
Jose Alexandre Diniz, Rodrigo REIGOTA César, Angelica Denardi Barros, Jair Fernandes Souza, Huziel Ramos Souto, Fernando cesar Rufino, Rentao Massaroto, Jacobus W Swart
Publikováno v:
ECS Transactions. 111:261-271
This review presents the technological evolution of devices based on Ion Sensitive Field Effect Transistors (ISFETs), which try to go along with the Metal Oxide Semiconductor FET (MOSFET) technology. Furthermore, many examples of the applications as
Publikováno v:
Research in Integrated STEM Education. :1-28
As the prevalence of integrated STEM education increases worldwide, some elementary schools in the United States have converted their programs to be more STEM-focused. This study examines the practices of two highly regarded STEM-focused elementary s
Publikováno v:
IEEE Microwave Magazine. 23:45-54
Autor:
Salvador Pinillos Gimenez, Christian Renaux, Jacobus W. Swart, Egon Henrique Salerno Galembeck, Denis Flandre
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 9, Pp 415-423 (2021)
I E E E Journal of the Electron Devices Society, Vol. 9, p. 415-423 (2021)
I E E E Journal of the Electron Devices Society, Vol. 9, p. 415-423 (2021)
This paper describes the influence of Longitudinal Corner Effect (LCE effect) and PArallel Connection of Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) with Different Channel Lengths Effect (PAMDLE effect) of Diamond (hexagonal gate
Autor:
Andreas Roodt, Marietjie Schutte-Smtih, Alice Brink, Dumisani V. Kama, Roger Alberto, Henrik Braband, Chantel W. Swart, Angelo Frei
Publikováno v:
New Journal of Chemistry. 45:22141-22149
Two bidentate PNP ligands N,N-bis(di-p-tolylphosphino)cyclohexylamine (Cy-pTolPNP) (1) and N,N-bis(di-p-tolylphosphino)cyclobutylamine (Cb-pTolPNP) (2) were synthesized and crystallized. Coordination to the fac-[MI(CO)3]+ core (M = Re, 99Tc) yielded
Autor:
Ezio M. Bastida, Saulo Finco, Roberto R. Panepucci, Stefan Tenenbaum, Jacobus W. Swart, Celio A. Finardi, Andre F. Ponchet
Publikováno v:
Journal of Integrated Circuits and Systems. 12:7-17
This article presents a complete design flow of a low noise transimpedance amplifier for 10 Gbps optoelectronic receivers. The proposed topology is based on the shunt-shunt structure with negative feedback. A set of equations was deduced from the fre
Autor:
Antonio G. Souza Filho, J. V. Silveira, Stanislav A. Moshkalev, Jacobus W. Swart, Raluca Savu, Josué Mendes Filho
Publikováno v:
Journal of Integrated Circuits and Systems. 9:103-109
A new approach to improve the electrical and thermal contacts between multi-walled carbon nanotubes and metallic electrodes was developed by using spatially localized laser heating coupled with a micro Raman equipment. After the deposition by dielect
Autor:
José Alexandre Diniz, Jacobus W. Swart, A. G. Felicio, J. Godoy Fo, M. A. A. Pudenzi, Ioshiaki Doi
Publikováno v:
Journal of Integrated Circuits and Systems. 1:41-47
Silicon oxynitride (SiOxNy) insulators have been obtained by nitrogen ion implantation into Si substrates prior to conventional or rapid thermal oxidation. These films have been used as gate insulators in nMOSFETs and MOS capacitors. nMOSFET electric