Resistance fluctuations in insulating silicon films with superconducting nanoprecipitates – superconductor-to-metal or vortex matter phase transition?

Autor: V. Heera, J. Fiedler, W. Skorupa

Publikováno v: AIP Advances, Vol 5, Iss 11, Pp 117219-117219-7 (2015)

Silicon films with Ga-rich nanoprecipitates are superconductors or insulators in dependence on their normal state resistance. Even in the insulating state of the film superconducting nanoprecipitates exist below the critical temperature of 7 K and de

Externí odkaz: https://doaj.org/article/79ed53e0619d4922914bd8599c2f59df

Deposition of silicon oxide films on silicon using HelixJet - an atmospheric-pressure plasma jet process below 100 °C

Autor: L. Rebohle, A. Quade, T. Schumann, D. Blaschke, R. Hübner, R. Heller, R. Foest, J. Schäfer, W. Skorupa

Publikováno v: Thin Solid Films. 753:139257

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d391482307c3bc0a3e8e4d60946cc5f4
https://doi.org/10.1016/j.tsf.2022.139257

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Strain and Band-Gap Engineering in Ge - Sn Alloys via P Doping

Autor: Vitaly Zviagin, Lars Rebohle, Jerzy Żuk, Robert Kudrawiec, Florian Bärwolf, W. Skorupa, Slawomir Prucnal, Shengqiang Zhou, Manfred Helm, Yonder Berencén, Matthias Voelskow, Yuji Yamamoto, M. P. Polak, Mao Wang, A. Droździel, Marius Grundmann, Marcin Turek, Rüdiger Schmidt-Grund, Krzysztof Pyszniak, Jörg Grenzer, René Hübner, Alexander Scheit

Publikováno v: Physical Review Applied. 10

Intrinsic bulk Ge is an indirect-band-gap semiconductor, but it can be converted to a direct-band-gap material by strain engineering, alloying with Sn, or ultrahigh $n$-type doping. The authors use all three approaches together to fabricate Ge-Sn wit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::85c8fcd2c5eb0a0b108acf77842036d7
https://doi.org/10.1103/physrevapplied.10.064055

Breaking the doping limit in silicon by deep impurities

Autor: Slawomir Prucnal, Yufang Xie, Manfred Helm, W. Skorupa, Ye Yuan, Alberto Debernardi, René Heller, Shengqiang Zhou, Mao Wang, Roman Böttger, Lars Rebohle, Chi Xu, Yonder Berencén

Publikováno v: Physical Review Applied 11 (2019): 054039-1–054039-15. doi:10.1103/PhysRevApplied.11.054039
info:cnr-pdr/source/autori:Mao Wang (1,2), A. Debernardi (3), Y. Berencén (1), R. Heller (1), Chi Xu (1,2), Ye Yuan (1,4), Yufang Xie (1,2), R. Böttger (1), L. Rebohle (1), W. Skorupa (1), M. Helm (1,2), S. Prucnal (1) and Shengqiang Zhou (1)/titolo:Breaking the Doping Limit in Silicon by Deep Impurities/doi:10.1103%2FPhysRevApplied.11.054039/rivista:Physical Review Applied/anno:2019/pagina_da:054039-1/pagina_a:054039-15/intervallo_pagine:054039-1–054039-15/volume:11
Physical Review Applied 11(2019), 054039

N-type doping in Si by shallow impurities, such as P, As and Sb, exhibits an intrinsic limit due to the Fermi-level pinning via defect complexes at high doping concentrations. Here we demonstrate that doping Si with the chalcogen Te by non-equilibriu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fe1da0836891641f4313e5bb2f083d0
http://arxiv.org/abs/1809.06055