Zobrazeno 1 - 10
of 15
pro vyhledávání: '"W. Simburger"'
Autor:
W. Eurskens, Horst Theuss, W. Simburger, J. Hirtreiter, H. Knapp, Robert Weigel, Jochen Dangelmaier, M. Engl, Klaus Pressel, K. Gnannt
Publikováno v:
2004 Proceedings. 54th Electronic Components and Technology Conference (IEEE Cat. No.04CH37546).
We present a low cost leadless packaging concept for applications in the GHz region. This package concept has an ultra-miniaturized footprint, small dimensions of the contact pads, and a standard package height of 0.4 mm. Further reduction of the pac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3dcb97c5934bc6148da19fc9e0141c8
https://doi.org/10.1109/ectc.2004.1320371
https://doi.org/10.1109/ectc.2004.1320371
Publikováno v:
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843).
A two stage differential (push-pull) Class AB power amplifier for 2.4 GHz has been realized in a 0.13 /spl mu/m standard CMOS technology. A microstrip line matching network was used for the impedance transformation. A maximum output power of 28 dBm w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbcc699dab9342265aceed2a33f1d88d
https://doi.org/10.1109/crmico.2004.183117
https://doi.org/10.1109/crmico.2004.183117
Publikováno v:
PIMRC
The next generation of cordless telephones in Europe will conform to the DECT (Digital European Cordless Telecommunications) standard. This standard makes a change from today's analog FDMA (Frequency Domain Multiple Access) transmission to the fully
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acdb832769d66fd305f566a68ac1ab58
https://doi.org/10.1109/pimrc.1992.279908
https://doi.org/10.1109/pimrc.1992.279908
Publikováno v:
Proceedings of MELECON '94. Mediterranean Electrotechnical Conference.
Due to the high intermodulation and adjacent channel radiation performance requirements, state of the art mobile communication systems ask for extremely linear transfer characteristics of the input, output and mixer stages of the transceivers. This r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8024f3c3d432292b10b3074220112df8
https://doi.org/10.1109/melcon.1994.380846
https://doi.org/10.1109/melcon.1994.380846
Autor:
Ernst Bonek, W. Simburger, G. Schultes, T.C. Leslie, J. Popp, N. Rohringer, P. Kreuzgruber, H. Knapp, P. Weger
Publikováno v:
PIMRC
The proper combination of architecture and integration concept will decide the success of a transceiver realization. The authors discuss three realization concepts of monolithic integrated transceivers: (i) a modular multichip solution, (ii) a dedica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6bc744736e42b9841360d76a17612ef
https://doi.org/10.1109/wncmf.1994.530824
https://doi.org/10.1109/wncmf.1994.530824
Publikováno v:
IEE Colloquium on RF and Microwave Circuits for Commercial Wireless Applications.
A monolithic integrated 1.6 W (32 dBm) power amplifier in silicon for 1.9 GHz wireless and mobile communications, is presented. The chip is implemented using 25 GHz f/sub t/, 0.8 /spl mu/m, three layer interconnect silicon bipolar production technolo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b13f02b08a883bf011fba1b3a63a68e0
https://doi.org/10.1049/ic:19970165
https://doi.org/10.1049/ic:19970165
Publikováno v:
Electronics Letters. 41:1281
A fully monolithically-integrated power amplifier with a bandwidth (−3 dB) from 20.5 to 31 GHz was realised in a 0.13 µm standard CMOS technology. A maximum power added efficiency of 13% with a corresponding output power of 13 dBm was achieved at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17225554b108a80ddbe4645f70cb28af
https://doi.org/10.1049/el:20053261
https://doi.org/10.1049/el:20053261
Publikováno v:
Electronics Letters. 39:375
A fully integrated 5.5 /spl times/ 8.1 mm/sup 2/ low temperature cofired ceramic (LTCC) power amplifier module for 5-6.5 GHz has been realised in a 40 GHz-f/sub T/-BiCMOS technology. No external components are required. At 1 to 2.4 V supply voltages
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08aa5c1eecd49f572becb1c3b8a5720f
https://doi.org/10.1049/el:20030249
https://doi.org/10.1049/el:20030249
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Conference
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